N0132S Description
The InterFET N0132S Geometry is ideal for low noise high gain applications.
N0132S Key Features
- Low Noise: 1.2 nV/√Hz Typical
- Typical Input Capacitance: 13pF
- Typical Breakdown Voltage: -45V
- High Input Impedance
- Small Die: 518um X 518um X 203um
- Bond Pads: 90um X 90um
- Substrate Connected to Gate
- Au Back-Side Finish