InterFET N0132S
the N0132L Geometry with higher BV and lower input capacitance.| Part No. | N0132S |
|---|---|
| Datasheet | N0132S Download |
| Manufacturer |  InterFET |
| Description | Process Geometry |
| Buy | Stock & Price |
FEATURES
● Low Noise: 1.2 nV/√Hz Typical● Typical Input Capacitance: 13pF
● Typical Breakdown Voltage: -45V
● High Input Impedance
● Small Die: 518um X 518um X 203um
● Bond Pads: 90um X 90um
● Substrate Connected to Gate
● Au Back-Side Finish
APPLICATIONS
● Low Noise Amplifier● Audio Amplifiers
● Mid to High-Gain
APPLICATIONS
● Matched PairAPPLICATIONS
● Custom Part OptionsDESCRIPTION
The InterFET N0132S Geometry is ideal for low noise high gain applications. Similar features to Geometry Top View 132 G S-D S-D G Test Pattern Standard Parts● 2N4391, 2N4392, 2N4393
● 2N3970, 2N3971, 2N3972
● 2N4856/A, 2N4857/A, 2N4858/A
● 2N4859/A, 2N4860/A, 2N4861/A
● J111, J112, J113
● IFN113 Product Summary Parameters BVGSS Gate to Source Breakdown Voltage IDSS Drain to Source Saturation Current VGS(off) Gate to Source Cutoff Voltage GFS Forward Transconductance Min Typ Max Unit -35 -45 V 5 150 mA -0.5 -7 V 32 mS
MAXIMUM RATINGS
(@ TA = 25°C, Unless otherwise specified) Parameters Min Typ Max Uni...
