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N0450L Datasheet Process Geometry

Manufacturer: InterFET

Overview: InterFET Product Folder Technical Support Order Now N0450L N0450L Process.

Datasheet Details

Part number N0450L
Manufacturer InterFET
File Size 557.96 KB
Description Process Geometry
Download N0450L Download (PDF)

General Description

The InterFET N0450L Geometry is ideal for low noise high gain applications.

Geometry Top View 450 G S-D G Standard Parts • 2N6550 • IF4500 • IF4520 • IFN860 S-D Test Pattern Product Summary Parameters BVGSS Gate to Source Breakdown Voltage IDSS Drain to Source Saturation Current VGS(off) Gate to Source Cutoff Voltage GFS Forward Transconductance Min Typ Max Unit -25 -30 V 5 750 mA -0.5 -10 V 100 mS Maximum Ratings (@ TA = 25°C, Unless otherwise specified) Parameters Min Typ Max Unit VRGS Reverse Gate to Source or Drain Voltage -25 -30 V IFG Continuous Forward Gate Current 10 mA TJ Operating Junction Temperature -55 150 °C TSTG Storage Temperature -65 175 °C Disclaimer: It is the Buyers responsibility for designing, validating and testing the end application under all field use cases and extreme use conditions.

Guaranteeing the application meets required standards, regulatory compliance, and all safety and security requirements is the responsibility of the Buyer.

Key Features

  • Low Noise: 0.9 nV/√Hz Typical.
  • Typical Input Capacitance: 35pF.
  • Typical Breakdown Voltage: -30V.
  • High Input Impedance.
  • Small Die: 670um X 670um X 203um.
  • Bond Pads: 90um X 90um.
  • Substrate Connected to Gate.
  • Au Back-Side Finish.