N0450L - Process Geometry

Description

The InterFET N0450L Geometry is ideal for low noise high gain applications.

2N6550 IF4500 IF4520 IFN860 S-D Test Pattern Product Summary Parameters BVGSS Gate to Source Breakdown Voltage IDSS Drain to Sour

Features

Low Noise: 0.9 nV/√Hz Typical.
Typical Input Capacitance: 35pF.
Typical Breakdown Voltage: -30V.
High Input Impedance.
Small Die: 670um X 670um X 203um.
Bond Pads: 90um X 90um.
Substrate Connected to Gate.
Au Back-Side Finish.

InterFET

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Datasheet Details

Part number	N0450L
Manufacturer	InterFET
File Size	557.96 KB
Description	Process Geometry
Datasheet	N0450L Datasheet
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N0450S - Process Geometry

Full PDF Text Transcription

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InterFET Product Folder Technical Support Order Now N0450L N0450L Process Geometry Features • Low Noise: 0.9 nV/√Hz Typical • Typical Input Capacitance: 35pF • Typical Breakdown Voltage: -30V • High Input Impedance • Small Die: 670um X 670um X 203um • Bond Pads: 90um X 90um • Substrate Connected to Gate • Au Back-Side Finish Applications • Low-Current • Low Gate Leakage Current • High Input Impedance • Low Noise Amplifier • Audio Amplifiers • Mid to High-Gain Applications • Matched Pair Applications • Custom Part Options Description The InterFET N0450L Geometry is ideal for low noise high gain applications.

Published: Jun 13, 2020 |