InterFET N0450S
The InterFET N0450S Geometry is ideal for low noise high gain applications.| Part No. | N0450S |
|---|---|
| Datasheet | N0450S Download |
| Manufacturer |  InterFET |
| Description | Process Geometry |
| Buy | Stock & Price |
FEATURES
● Low Noise: 1.0 nV/√Hz Typical● Typical Input Capacitance: 28pF
● Typical Breakdown Voltage: -45V
● High Input Impedance
● Small Die: 670um X 670um X 203um
● Bond Pads: 90um X 90um
● Substrate Connected to Gate
● Au Back-Side Finish
APPLICATIONS
● Low-Current● Low Gate Leakage Current
● Low Rds(on) Switch
● Low Noise Amplifier
● Audio Amplifiers
● Mid to High-Gain
APPLICATIONS
● Matched PairAPPLICATIONS
● Custom Part OptionsDESCRIPTION
Geometry Top View 450 G S-D G Standard Parts● IFN363
● IFN146
● J108, J109, J110A S-D Test Pattern Product Summary Parameters BVGSS Gate to Source Breakdown Voltage IDSS Drain to Source Saturation Current VGS(off) Gate to Source Cutoff Voltage GFS Forward Transconductance Min Typ Max Unit -30 -45 V 5 600 mA -0.5 -10 V 90 mS
MAXIMUM RATINGS
(@ TA = 25°C, Unless otherwise specified) Parameters Min Typ Max Unit VRGS Reverse Gate to Source or Drain Voltage -30 -45 V IFG Continuous Forward Gate Current 10 mA TJ Operating Junction Temperature -5...
