InterFET N0450L
The InterFET N0450L Geometry is ideal for low noise high gain applications.FEATURES
● Low Noise: 0.9 nV/√Hz Typical● Typical Input Capacitance: 35pF
● Typical Breakdown Voltage: -30V
● High Input Impedance
● Small Die: 670um X 670um X 203um
● Bond Pads: 90um X 90um
● Substrate Connected to Gate
● Au Back-Side Finish
APPLICATIONS
● Low-Current● Low Gate Leakage Current
● High Input Impedance
● Low Noise Amplifier
● Audio Amplifiers
● Mid to High-Gain
APPLICATIONS
● Matched PairAPPLICATIONS
● Custom Part OptionsDESCRIPTION
Geometry Top View 450 G S-D G Standard Parts● 2N6550
● IF4500
● IF4520
● IFN860 S-D Test Pattern Product Summary Parameters BVGSS Gate to Source Breakdown Voltage IDSS Drain to Source Saturation Current VGS(off) Gate to Source Cutoff Voltage GFS Forward Transconductance Min Typ Max Unit -25 -30 V 5 750 mA -0.5 -10 V 100 mS
MAXIMUM RATINGS
(@ TA = 25°C, Unless otherwise specified) Parameters Min Typ Max Unit VRGS Reverse Gate to Source or Drain Voltage -25 -30 V IFG Continuous Forward Gate Current 10 mA TJ Operating Junction Temperature -...