N0450L Overview
Description
The InterFET N0450L Geometry is ideal for low noise high gain applications. Geometry Top View 450 G S-D G Standard Parts - 2N6550 - IF4500 - IF4520 - IFN860 S-D Test Pattern Product Summary Parameters BVGSS Gate to Source Breakdown Voltage IDSS Drain to Source Saturation Current VGS(off) Gate to Source Cutoff Voltage GFS Forward Transconductance Min Typ Max Unit -25 -30 V 5 750 mA -0.5 -10 V 100 mS Parameters Min Typ Max Unit VRGS Reverse Gate to Source or Drain Voltage -25 -30 V IFG Continuous Forward Gate Current 10 mA TJ Operating Junction Temperature -55 150 °C TSTG Storage Temperature -65 175 °C Disclaimer: It is the Buyers responsibility for designing, validating and testing the end application under all field use cases and extreme use conditions.
Key Features
- Low Noise: 0.9 nV/√Hz Typical
- Typical Input Capacitance: 35pF
- Typical Breakdown Voltage: -30V
- High Input Impedance
- Small Die: 670um X 670um X 203um
- Bond Pads: 90um X 90um
- Substrate Connected to Gate
- Au Back-Side Finish
