InterFET N0014EU
The InterFET N0014EU Geometry is targeted for low noise high gain amplifier applications. The low input capacitance makes it ideal for higher frequency applications.| Part No. | N0014EU |
|---|---|
| Datasheet | N0014EU Download |
| Manufacturer |  InterFET |
| Description | Process Geometry |
| Buy | Stock & Price |
FEATURES
● Low Input Capacitance: 2.3pF Typical● Low Gate Leakage: 1.5pA Typical
● High Breakdown Voltage: -30V Typical
● High Input Impedance
● Die Size: 482um X 482um X 203um
● Bond Pads: 90um Diameter
● Substrate Connected to Gate
● Au Back Side Finish
● Flip Chip Bumped Package Option
APPLICATIONS
● Small Signal Amplifiers● Audio Amplifiers
● Low Noise High Gain Amplifier
● RF Amplifiers
● Custom Part Options
DESCRIPTION
Geometry Top View S-D S-D NC D 14EU Note: Gate connected to backside metal Connection Configuration Diode Gate Source-Drain Source-Drain Product Summary Parameters BVGSS Gate to Source Breakdown Voltage IDSS Drain to Source Saturation Current VGS(off) Gate to Source Cutoff Voltage GFS Forward Transconductance Min Typ Max Unit -15 -30 V 0.5 10 20 mA -0.5 -7 V 4.0 mSMAXIMUM RATINGS
(@ TA = 25°C, Unless otherwise specified) Parameters Min Typ Max Unit VRGS Reverse Gate to Source or Drain Voltage -15 -30 V IFG Continuous Forward Gate Current 10 mA TJ Operating Junct...
