N0014EU
Features
- Low Input Capacitance: 2.3p F Typical
- Low Gate Leakage: 1.5p A Typical
- High Breakdown Voltage: -30V Typical
- High Input Impedance
- Die Size: 482um X 482um X 203um
- Bond Pads: 90um Diameter
- Substrate Connected to Gate
- Au Back Side Finish
- Flip Chip Bumped Package Option
Applications
- Small Signal Amplifiers
- Audio Amplifiers
- Low Noise High Gain Amplifier
- RF Amplifiers
- Custom Part Options
Description
The Inter FET N0014EU Geometry is targeted for low noise high gain amplifier applications. The low input capacitance makes it ideal for higher frequency applications.
Geometry Top View
S-D
S-D
14EU
Note: Gate connected to backside metal
Connection Configuration
Diode Gate
Source-Drain Source-Drain
Product Summary
Parameters
BVGSS Gate to Source Breakdown Voltage
IDSS Drain to Source Saturation Current
VGS(off) Gate to Source Cutoff Voltage
Forward Transconductance
Min
Typ
Max
Unit
-15...
