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N0014EU - Process Geometry

General Description

The InterFET N0014EU Geometry is targeted for low noise high gain amplifier applications.

The low input capacitance makes it ideal for higher frequency applications.

Key Features

  • Low Input Capacitance: 2.3pF Typical.
  • Low Gate Leakage: 1.5pA Typical.
  • High Breakdown Voltage: -30V Typical.
  • High Input Impedance.
  • Die Size: 482um X 482um X 203um.
  • Bond Pads: 90um Diameter.
  • Substrate Connected to Gate.
  • Au Back Side Finish.
  • Flip Chip Bumped Package Option.

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Datasheet Details

Part number N0014EU
Manufacturer InterFET
File Size 399.36 KB
Description Process Geometry
Datasheet download datasheet N0014EU Datasheet

Full PDF Text Transcription for N0014EU (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for N0014EU. For precise diagrams, and layout, please refer to the original PDF.

InterFET Product Folder Technical Support Order Now N0014EU N0014EU Process Geometry Features • Low Input Capacitance: 2.3pF Typical • Low Gate Leakage: 1.5pA Typical • H...

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Input Capacitance: 2.3pF Typical • Low Gate Leakage: 1.5pA Typical • High Breakdown Voltage: -30V Typical • High Input Impedance • Die Size: 482um X 482um X 203um • Bond Pads: 90um Diameter • Substrate Connected to Gate • Au Back Side Finish • Flip Chip Bumped Package Option Applications • Small Signal Amplifiers • Audio Amplifiers • Low Noise High Gain Amplifier • RF Amplifiers • Custom Part Options Description The InterFET N0014EU Geometry is targeted for low noise high gain amplifier applications. The low input capacitance makes it ideal for higher frequency applications.