• Part: N0016H
  • Description: Process Geometry
  • Manufacturer: InterFET
  • Size: 876.21 KB
Download N0016H Datasheet PDF
InterFET
N0016H
Features - Low Input Capacitance: 3.5p F Typical - Low Gate Leakage: 10p A Typical - High Breakdown Voltage: -60V Typical - High Input Impedance - Small Die: 391um X 391um X 203um - Bond Pads: 90um X 90um - Substrate Connected to Gate - Au Back Side Finish Applications - Small Signal Amplifiers - Audio Amplifiers - VCR’s - Current Limiters and Regulators - Custom Part Options Description The Inter FET N0016H Geometry is targeted for general purpose amplifiers, current limiters, regulators, and VCR applications. The low input capacitance makes it ideal for mid-frequency applications. Product Summary Parameters BVGSS Gate to Source Breakdown Voltage IDSS Drain to Source Saturation Current VGS(off) Gate to Source Cutoff Voltage Forward Transconductance Maximum Ratings (@ TA = 25°C, Unless otherwise specified) Parameters VRGS Reverse Gate to Source or Drain Voltage IFG Continuous Forward Gate Current TJ Operating Junction Temperature TSTG Storage Temperature Geometry Top...