N0014L
Features
- Low Input Capacitance: 2.3p F Typical
- Low Gate Leakage: 2.0p A Typical
- High Breakdown Voltage: -30V Typical
- High Input Impedance
- Small Die: 365um X 365um X 203um
- Bond Pads: 90um X 90um and 66um Dia.
- Substrate Connected to Gate
- Au Back Side Finish
Applications
- Small Signal Amplifiers
- Audio Amplifiers
- Low Noise High Gain Amplifier
- RF Amplifiers
- Custom Part Options
Description
The Inter FET N0014L Geometry is targeted for low noise high gain amplifier applications. The low input capacitance makes it ideal for higher frequency applications.
Geometry Top View
S-D
S-D
Test Pattern
Standard Parts
- IF140, IF140A
Product Summary
Parameters
BVGSS Gate to Source Breakdown Voltage
IDSS
Drain to Source Saturation Current
VGS(off) Gate to Source Cutoff Voltage
Forward Transconductance
Min
Typ
Max
Unit
-15
-30...
