InterFET N0014L
The InterFET N0014L Geometry is targeted for low noise high gain amplifier applications. The low input capacitance makes it ideal for higher frequency applications.| Part No. | N0014L |
|---|---|
| Datasheet | N0014L Download |
| Manufacturer |  InterFET |
| Description | Process Geometry |
| Buy | Stock & Price |
FEATURES
● Low Input Capacitance: 2.3pF Typical● Low Gate Leakage: 2.0pA Typical
● High Breakdown Voltage: -30V Typical
● High Input Impedance
● Small Die: 365um X 365um X 203um
● Bond Pads: 90um X 90um and 66um Dia.
● Substrate Connected to Gate
● Au Back Side Finish
APPLICATIONS
● Small Signal Amplifiers● Audio Amplifiers
● Low Noise High Gain Amplifier
● RF Amplifiers
● Custom Part Options
DESCRIPTION
Geometry Top View 14 G S-D S-D G Test Pattern Standard Parts● IF140, IF140A Product Summary Parameters BVGSS Gate to Source Breakdown Voltage IDSS Drain to Source Saturation Current VGS(off) Gate to Source Cutoff Voltage GFS Forward Transconductance Min Typ Max Unit -15 -30 V 0.5 10 20 mA -0.5 -7 V 4.0 mS
MAXIMUM RATINGS
(@ TA = 25°C, Unless otherwise specified) Parameters Min Typ Max Unit VRGS Reverse Gate to Source or Drain Voltage -15 -30 V IFG Continuous Forward Gate Current 10 mA TJ Operating Junction Temperature -55 150 °C TSTG Storage Temperature -65 175 °C Disclaimer: It is the Buyers responsibility for designing, validating and testing the end application under all field use cases and extreme use conditions.
