N0014L - Process Geometry

InterFET

General Description

The InterFET N0014L Geometry is targeted for low noise high gain amplifier applications.

The low input capacitance makes it ideal for higher frequency applications.

IF140, IF140A Product Summary Parameters BVGSS Gate t

Key Features

Low Input Capacitance: 2.3pF Typical.
Low Gate Leakage: 2.0pA Typical.
High Breakdown Voltage: -30V Typical.
High Input Impedance.
Small Die: 365um X 365um X 203um.
Bond Pads: 90um X 90um and 66um Dia.
Substrate Connected to Gate.
Au Back Side Finish.

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N0014L process geometry by InterFET - Datasheet Preview

Datasheet Details

Part number	N0014L
Manufacturer	InterFET
File Size	877.32 KB
Description	Process Geometry
Datasheet	N0014L Datasheet

Full PDF Text Transcription for N0014L (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for N0014L. For precise diagrams, and layout, please refer to the original PDF.

InterFET Product Folder Technical Support Order Now N0014L N0014L Process Geometry Features • Low Input Capacitance: 2.3pF Typical • Low Gate Leakage: 2.0pA Typical • Hig...

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put Capacitance: 2.3pF Typical • Low Gate Leakage: 2.0pA Typical • High Breakdown Voltage: -30V Typical • High Input Impedance • Small Die: 365um X 365um X 203um • Bond Pads: 90um X 90um and 66um Dia. • Substrate Connected to Gate • Au Back Side Finish Applications • Small Signal Amplifiers • Audio Amplifiers • Low Noise High Gain Amplifier • RF Amplifiers • Custom Part Options Description The InterFET N0014L Geometry is targeted for low noise high gain amplifier applications. The low input capacitance makes it ideal for higher frequency applications.

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