B-42
IFN424, IFN425, IFN426
Dual N-Channel Silicon Junction Field-Effect Transistor
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Absolute maximum ratings at TA = 25¡C
Device Dissapation (Derate 3.2 mW/°C to 50°C)
400 mW
Total Device Dissipation (Derate 6 mW/°C to 150 °C)
750 mW
Storage Temperature Range
– 60 °C to 200 °C
At 25°C free air temperature:
Static Electrical Characteristics
IFN424, IFN425, IFN426
Min Typ Max Unit
Process NJ01
Test Conditions
Gate Source Breakdown Voltage
Gate to Gate Breakdown Voltage
Gate Reverse Current
Gate Operating Current
Gate Source Cutoff Voltage
Gate Source Voltage
Drain Saturation Current (Pulsed)
Dynamic Electrical Characteristics
V(BR)GSS
BVG1G2
IGSS
IG
VGS(OFF)
VGS
IDSS
– 40
±40
– 0.4
60
– 60
–3
–3
– 0.5
– 500
–3
– 2.9
1800
V IG = – 1 µA, VDS = ØV
V IG = – 1 µA, ID = ØA, IS = ØA
pA VGS = – 20V, VDS = ØV
nA VGS = – 20V, VDS = ØV
pA VDS = 10V, ID = 30 µA
pA VDS = 10V, ID = 30 µA
V VDS = 10V, ID = 1 nA
V VDS = 10V, ID = 30 µA
µA VDS = 10V, VGS = Ø V
TA = +125°C
TA = +125°C
Common Source Forward Transconductance gfs
Common Source Output Conductance gos
Common Source Input Capacitance
Ciss
Common Source Reverse Transfer Capacitance Crss
Equivalent Short Circuit Input Noise Voltage e¯N
Noise Figure
NF
100 1500 µS VDS = 10V, VGS = Ø V
3 µS VDS = 10V, ID = 30 µA
3 pF VDS = 10V, VGS = Ø V
1.5 pF VDS = 10V, VGS = Ø V
20 70 nV/√Hz VDS = 10V, ID = 30 µA
1
dB
VDS = 10V, ID = 30 µA
RG = 1 MΩ
f = 1 kHz
f = 1 kHz
f = 1 MHz
f = 1 MHz
f = 10 Hz
f = 10 Hz
Max - IFN424 IFN425 IFN426
Differential Gate Source Voltage
Differential Gate Source Voltage
With Temperature
|VGS1– VGS2| 10 15 25 mV VDG = 10V, ID = 30 µA
|VGS1– VGS2|
∆T
10
25
40 µV/°C VDG = 10V, ID = 30 µA
TA = – 55°C
TB = 25°C
TC = 125°C
Min - IFN424 IFN425 IFN426
Common Mode Rejection Ratio
CMRR
90 80 80 dB VDG = 10V to 20V, ID = 30 µA
TOÐ78 Package
See Section G for Outline Dimensions
Pin Configuration
1 Source 1, 2 Drain 1, 3 Gate 1, 4 Case,
5 Source 2, 6 Drain 2, 7 Gate 2,
8 Omitted
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