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International Rectifier Electronic Components Datasheet

2N7581U2 Datasheet

POWER MOSFET

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RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-2)
Product Summary
Part Number Radiation Level
IRHNA67164 100 kRads(Si)
IRHNA63164 300 kRads(Si)
RDS(on)
0.018
0.018
ID
56A*
56A*
PD-96959C
IRHNA67164
2N7581U2
150V, N-CHANNEL
R6 TECHNOLOGY
SMD-2
Description
IR HiRel R6 S-line technology provides high performance
power MOSFETs for space applications. These devices
have improved immunity to Single Event Effect (SEE) and
have been characterized for useful performance with Linear
Energy Transfer LET up to 90 (MeV/(mg/cm2).Their
combination of very low RDS(on) and faster switching times
reduces power loss and increases power density in today’s
high speed switching applications such as DC-DC
converters and motor controllers. These devices retain all of
the well established advantages of MOSFETs such as
voltage control and temperature stability of electrical
parameters.
Features
Low RDS(on)
Fast Switching
Single Event Effect (SEE) Hardened
Low Total Gate Charge
Simple Drive Requirements
Hermetically Sealed
Surface Mount
Ceramic Package
Light Weight
ESD Rating: Class 3A per MIL-STD-750,
Method 1020
Absolute Maximum Ratings
Symbol
Parameter
ID1 @ VGS = 12V, TC = 25°C Continuous Drain Current
ID2 @ VGS = 12V, TC = 100°C Continuous Drain Current
IDM @ TC = 25°C
Pulsed Drain Current
PD @TC = 25°C
Maximum Power Dissipation
Linear Derating Factor
VGS Gate-to-Source Voltage
EAS Single Pulse Avalanche Energy
IAR
EAR
dv/dt
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
TJ
TSTG
Operating Junction and
Storage Temperature Range
Lead Temperature
Weight
Value
56*
49
224
250
2.0
±20
283
56
25
7.5
-55 to + 150
300 (for 5s)
3.3 (Typical)
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
g
* Current is limited by package
For Footnotes, refer to the page 2.
1 International Rectifier HiRel Products, Inc.
2018-10-24


International Rectifier Electronic Components Datasheet

2N7581U2 Datasheet

POWER MOSFET

No Preview Available !

IRHNA67164
2N7581U2
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Symbol
BVDSS
BVDSS/TJ
RDS(on)
VGS(th)
VGS(th)/TJ
gfs
IDSS
IGSS
QG
QGS
QGD
td(on)
tr
td(off)
tf
Ls +LD
Ciss
Coss
Crss
RG
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-
Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Forward Transconductance
Zero Gate Voltage Drain Current
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Min.
150
–––
–––
2.0
–––
50
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
Test Conditions
––– ––– V VGS = 0V, ID = 1.0mA
0.17 ––– V/°C Reference to 25°C, ID = 1.0mA
––– 0.018  VGS = 12V, ID2 = 49A 
–––
-9.83
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
2.8
7390
1144
28
0.52
4.0
–––
–––
10
25
100
-100
230
70
90
50
150
100
50
–––
–––
–––
–––
–––
V
mV/°C
VDS = VGS, ID = 1.0mA
S VDS = 15V, ID2 = 49A
µA
VDS = 120V, VGS = 0V
VDS = 120V,VGS = 0V,TJ =125°C
nA
nC  
ns
nH  
VGS = 20V
VGS = -20V
ID1 = 56A
VDS = 75V
VGS = 12V
VDD = 75V
ID1 = 56A
RG = 2.35
VGS = 12V
Measured from center of Drain
pad to center of Source pad
VGS = 0V
pF   VDS = 25V
ƒ = 100KHz
 ƒ = 1.0MHz, open drain
Source-Drain Diode Ratings and Characteristics
Symbol
Parameter
Min. Typ. Max. Units
Test Conditions
IS
ISM
Continuous Source Current (Body Diode) ––– ––– 56*
Pulsed Source Current (Body Diode) ––– ––– 224
A 
VSD Diode Forward Voltage
––– ––– 1.2
V TJ=25°C, IS = 56A, VGS=0V
trr Reverse Recovery Time
––– ––– 370 ns TJ=25°C, IF = 56A,VDD 25V
Qrr Reverse Recovery Charge
––– ––– 4.5 µC di/dt = 100A/µs
ton Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
* Current is limited by package
Thermal Resistance  
Symbol
Parameter
RJC Junction-to-Case
RJ-PCB
Junction-to-PC Board (Soldered to 2” sq copper clad board)
Min.
–––
–––
Typ.
–––
1.6
Max.
0.5
–––
Units
°C/W
 Footnotes:
 Repetitive Rating; Pulse width limited by maximum junction temperature.
VDD = 50V, starting TJ = 25°C, L = 0.18mH, Peak IL = 56A, VGS = 12V
ISD 56A, di/dt 860A/µs, VDD 150V, TJ 150°C
Pulse width 300 µs; Duty Cycle 2%
Total Dose Irradiation with VGS Bias. 12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, Method 1019, condition A.
Total Dose Irradiation with VDS Bias. 120 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, Method 1019, condition A.
2
International Rectifier HiRel Products, Inc.
2018-10-24


Part Number 2N7581U2
Description POWER MOSFET
Maker International Rectifier
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2N7581U2 Datasheet PDF






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International Rectifier





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