Datasheet Details
| Part number | 2N7581U2 |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 448.34 KB |
| Description | POWER MOSFET |
| Download | 2N7581U2 Download (PDF) |
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| Part number | 2N7581U2 |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 448.34 KB |
| Description | POWER MOSFET |
| Download | 2N7581U2 Download (PDF) |
|
|
|
IR HiRel R6 S-line technology provides high performance power MOSFETs for space applications.
These devices have improved immunity to Single Event Effect (SEE) and have been characterized for useful performance with Linear Energy Transfer LET up to 90 (MeV/(mg/cm2).Their combination of very low RDS(on) and faster switching times reduces power loss and increases power density in today’s high speed switching applications such as DC-DC converters and motor controllers.
These devices retain all of the well established advantages of MOSFETs such as voltage control and temperature stability of electrical parameters.
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) Product Summary Part Number Radiation Level IRHNA67164 100 kRads(Si) IRHNA63164 300 kRads(Si) RDS(on) 0.018 0.
| Part Number | Description |
|---|---|
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| 2N7599T3 | RADIATION HARDENED POWER MOSFET |
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