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International Rectifier Electronic Components Datasheet

2N7590T3 Datasheet

RADIATION HARDENED POWER MOSFET

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RADIATION HARDENED
POWER MOSFET
THRU-HOLE (Low-Ohmic TO-257AA)
PD-96930C
2N7590T3
IRHYS67134CM
150V, N-CHANNEL
TECHNOLOGY
Product Summary
Part Number Radiation Level
IRHYS67134CM 100K Rads (Si)
IRHYS63134CM 300K Rads (Si)
RDS(on)
0.090
0.090
ID
19A
19A
International Rectifier’s R6TM technology provides
superior power MOSFETs for space applications.
These devices have improved immunity to Single
Event Effect (SEE) and have been characterized for
useful performance with Linear Energy Transfer
(LET) up to 90MeV/(mg/cm2). Their combination of
very low RDS(on) and faster switching times reduces
power loss and increases power density in today’s
high speed switching applications such as DC-DC
converters and motor controllers. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, ease of paralleling
and temperature stability of electrical parameters.
Low-Ohmic
TO-257AA
Features:
n Low RDS(on)
n Fast Switching
n Single Event Effect (SEE) Hardened
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Eyelets
n Electrically Isolated
n Light Weight
n ESD Rating: Class 2 per MIL-STD-750,
Method 1020
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C Continuous Drain Current
ID @ VGS = 12V, TC = 100°C Continuous Drain Current
IDM Pulsed Drain Current À
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
19
12
76
75
0.6
±20
67
19
7.5
7.8
-55 to 150
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 (0.063 in. /1.6 mm from case for 10s)
4.3 (Typical)
g
For footnotes refer to the last page
www.irf.com
1
01/31/14


International Rectifier Electronic Components Datasheet

2N7590T3 Datasheet

RADIATION HARDENED POWER MOSFET

No Preview Available !

IRHYS67134CM, 2N7590T3
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Pre-Irradiation
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
BVDSS/TJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
VGS(th)/TJ Gate Threshold Voltage Coefficient
gfs Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Min
150
2.0
14
IGSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Typ Max Units
——
V
0.19 — V/°C
Test Conditions
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
— 0.090
VGS = 12V, ID = 12A Ã
-9.51
6.8
1540
240
5.2
1.1
4.0
10
25
100
-100
50
15
18
20
30
35
25
V
mV/°C
S
µA
nA
nC
ns
nH
pF
VDS = VGS, ID = 1.0mA
VDS = 15V, IDS = 12A Ã
VDS= 120V, VGS = 0V
VDS = 120V,
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS = 12V, ID = 19A
VDS = 75V
VDD = 75V, ID = 19A,
VGS = 12V, RG = 7.5
Measured from Drain lead
( 6mm / 0.025 in from package )
to Source lead ( 6mm/ 0.025 in
from package )
VGS = 0V, VDS = 25V
f = 1.0MHz
f = 1.0MHz, open drain
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
IS Continuous Source Current (Body Diode) — —
ISM Pulse Source Current (Body Diode) À
——
19
76
A
VSD Diode Forward Voltage
— — 1.2 V
trr Reverse Recovery Time
— — 300 ns
QRR Reverse Recovery Charge
— — 2.6 µC
Tj = 25°C, IS = 19A, VGS = 0V Ã
Tj = 25°C, IF = 19A, di/dt 100A/µs
VDD 25V Ã
ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
RthJA
Junction-to-Case
Junction-to-Ambient
Min Typ Max Units
Test Conditions
1.67
80
°C/W
Typical Socket Mount
Note: Corresponding Spice and Saber models are available on International Rectifier Web site.
For footnotes refer to the last page
2 www.irf.com


Part Number 2N7590T3
Description RADIATION HARDENED POWER MOSFET
Maker International Rectifier
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