2N7590T3 Datasheet | International Rectifier

RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA) PD-96930C 2N7590T3 IRHYS67134CM 150V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHYS67134CM 100K Rads (Si) IRHYS63134CM 300K Rads (Si) RDS(on) 0.090Ω 0.090Ω ID 19A 19A International Rectifier’s R6TM technology provides superior power MOSFETs for space applications. These devices have improved immunity to Single Event Effect (SEE) and have been characterized for useful performance with Linear Energy Transfer (LET) up to 90MeV/(mg/cm2). Their bination of very low RDS(on) and faster switching times reduces power loss and increases power density in today’s high speed switching applications such as...