2N7592T3 Datasheet | International Rectifier

Features : n Low RDS(on) n Fast Switching n Single Event Effect (SEE) Hardened n Low Total Gate Charge n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Ceramic Eyelets n Electrically Isolated n Light Weight Absolute Maximum Ratings ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C Parameter Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor VGS EAS IAR EAR dv/dt TJ TSTG Gate-to-Source Voltage Single Pulse Avalanche Energy Á Avalanche Current À Repetitive Avalanche Energy À Peak Diode Recovery dv/dt  Operating Junction Storage Temperature Range Lead Temperature Weight 16 10 64 75 0.6 ±20 83 16 7.5 9.0 -55 to 150 Pre-Irradiation Units W W/°C V m J A m J V/ns °C 300 (0.063 in. /1.6 mm from case for 10s) 4.3 (Typical) g For footnotes refer to the last page .irf. 06/15/10 IRHYS67230CM, 2N7592T3 Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Pre-Irradiation Parameter BVDSS Drain-to-Source Breakdown Voltage ∆BVDSS/∆TJ Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage ∆VGS(th)/∆TJ Gate Threshold Voltage Coefficient gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current Min 200 - - - 11 - -...