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International Rectifier Electronic Components Datasheet

2N7609U8 Datasheet

Power MOSFET

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PD-97326A
RADIATION HARDENED
LOGIC LEVEL POWER MOSFET
SURFACE MOUNT (SMD-0.2)
Product Summary
Part Number Radiation Level
IRHLNM77110 100K Rads (Si)
IRHLNM73110 300K Rads (Si)
RDS(on)
0.29
0.29
ID
6.5A
6.5A
2N7609U8
IRHLNM77110
100V, N-CHANNEL
TECHNOLOGY
™
International Rectifier’s R7TM Logic Level Power MOSFETs
provide simple solution to interfacing CMOS and TTL control
circuits to power devices in space and other radiation
environments.The threshold voltage remains within
acceptable operating limits over the full operating
temperature and post radiation.This is achieved while
maintaining single event gate rupture and single event
burnout immunity.
The device is ideal when used to interface directly with most
logic gates, linear IC’s, micro-controllers, and other device
types that operate from a 3.3-5V source. It may also be
used to increase the output current of a PWM, voltage
comparator or an operational amplifier where the logic level
drive signal is available.
Absolute Maximum Ratings
Parameter
ID @VGS = 4.5V,TC = 25°C
ID @VGS = 4.5V,TC = 100°C
IDM
PD @ TC = 25°C
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
SMD-0.2
Features:
n 5V CMOS and TTL Compatible
n Fast Switching
n Single Event Effect (SEE) Hardened
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Package
n Surface Mount
n Light Weight
6.5
4.1
26
23.2
0.18
±10
21
6.5
2.32
4.3
-55 to 150
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 (for 5s)
0.25 (Typical)
g
For footnotes refer to the last page
www.irf.com
1
02/21/12
Free Datasheet http://www.Datasheet4U.com


International Rectifier Electronic Components Datasheet

2N7609U8 Datasheet

Power MOSFET

No Preview Available !

IRHLNM77110, 2N7609U8
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
BVDSS/TJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
VGS(th)/TJ Gate Threshold Voltage Coefficient
gfs Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Min
100
1.0
3.5
IGSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Typ Max Units
——
V
0.105 — V/°C
Test Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1.0mA
— 0.29
VGS = 4.5V, ID = 4.1A Ã
-6.0
6.8
572
124
1.6
10.5
2.0
1.0
10
100
-100
11
4.0
6.0
18
75
50
12
V
mV/°C
S
µA
nA
nC
ns
VDS = VGS, ID = 250µA
VDS = 15V, IDS = 4.1A Ã
VDS= 80V ,VGS=0V
VDS = 80V,
VGS = 0V, TJ = 125°C
VGS = 10V
VGS = -10V
VGS = 4.5V, ID = 6.5A
VDS = 50V
VDD = 50V, ID = 6.5A,
VGS = 5.0V, RG = 7.5
nH Measured from the center of
drain pad to center of source pad
VGS = 0V, VDS = 25V
pF f = 1.0MHz
f = 1.0MHz, open drain
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
IS Continuous Source Current (Body Diode) — — 6.5
ISM Pulse Source Current (Body Diode) À
— — 26
A
VSD Diode Forward Voltage
— — 1.2 V
trr Reverse Recovery Time
— — 215 ns
QRR Reverse Recovery Charge
— — 1.05 µC
Tj = 25°C, IS = 6.5A, VGS = 0V Ã
Tj = 25°C, IF = 6.5A, di/dt 100A/µs
VDD 25V Ã
ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
Junction-to-Case
Min Typ Max Units
— — 5.4 °C/W
Test Conditions
Note: Corresponding Spice and Saber models are available on International Rectifier Web site.
For footnotes refer to the last page
2 www.irf.com
Free Datasheet http://www.Datasheet4U.com


Part Number 2N7609U8
Description Power MOSFET
Maker International Rectifier
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