2N7627UC Datasheet | International Rectifier

Features : n n n n n n n n n n 5V CMOS and TTL patible Low RDS(on) Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Light Weight plimentary N-Channel Available IRHLUC770Z4 Absolute Maximum Ratings (Per Die) Parameter ID @ VGS = -4.5V, TC = 25°C ID @ VGS = -4.5V,TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Á Avalanche Current À Repetitive Avalanche Energy À Peak Diode Recovery dv/dt  Operating Junction Storage Temperature Range Pckg. Mounting Surface Temp Weight For footnotes refer to the last page -0.65 -0.41 -2.6 1.0 0.01 ±10 34 -0.65 0.1 -5.6 -55 to 150 300 (for 5s) 0.2 (Typical) Pre-Irradiation Units W/°C V m J A m J V/ns °C g .irf. 10/11/10 Free Datasheet http://.. IRHLUC7970Z4, 2N7627UC Electrical Characteristics For P-Channel Die @Tj = 25°C Parameter Min BVDSS Drain-to-Source Breakdown Voltage -60 ∆ BV DSS / ∆ T J Temperature Coefficient of Breakdown - Voltage RDS(on) Static Drain-to-Source On-State - Resistance VGS(th) Gate Threshold Voltage -1.0 - ∆VGS(th)/∆TJ Gate Threshold Voltage Coefficient gfs Forward Transconductance 0.5 IDSS Zero Gate Voltage Drain Current - - IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance - - - - - - - - - - - -0.06 - - 3.6 - - - - - - - - - - - - 33 - - 1.60 -2.0 - - -1.0 -10 -100 100 3.6 1.5 1.8 23 22 32 26 - Pre-Irradiation (Unless Otherwise...