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International Rectifier Electronic Components Datasheet

2N7632UC Datasheet

Power MOSFET

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PD-97268A
2N7632UC
IRHLUC7670Z4
RADIATION HARDENED 60V, Combination 1N-1P-CHANNEL
LOGIC LEVEL POWER MOSFET
TECHNOLOGY
SURFACE MOUNT (LCC-6)
™
Product Summary
Part Number Radiation Level
IRHLUC7670Z4 100K Rads (Si)
IRHLUC7630Z4 300K Rads (Si)
RDS(on)
0.75
1.60
0.75
1.60
ID
0.89A
-0.65A
0.89A
-0.65A
International Rectifier’s R7TM Logic Level Power MOSFETs
provide simple solution to interfacing CMOS and TTL control
circuits to power devices in space and other radiation
environments.The threshold voltage remains within
acceptable operating limits over the full operating
temperature and post radiation.This is achieved while
maintaining single event gate rupture and single event
burnout immunity.
The device is ideal when used to interface directly with most
logic gates, linear IC’s, micro-controllers, and other device
types that operate from a 3.3-5V source. It may also be
used to increase the output current of a PWM, voltage
comparator or an operational amplifier where the logic level
drive signal is available.
CHANNEL
N
P
N
P
LCC-6
Features:
n 5V CMOS and TTL Compatible
n Low RDS(on)
n Fast Switching
n Single Event Effect (SEE) Hardened
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Light Weight
Absolute Maximum Ratings (Per Die)
Parameter
ID@ VGS = ±4.5V, TC= 25°C Continuous Drain Current
ID@ VGS = ±4.5V, TC=100°C Continuous Drain Current
IDM Pulsed Drain Current À
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt
TJ
TSTG
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
Pre-Irradiation
N-Channel
P-Channel
0.89 -0.65
0.56
-0.41
3.56 -2.6
1.0 1.0
0.01
0.01
±10 ±10
20 Á
34 ²
0.89
-0.65
0.1 0.1
4.7 Â
-5.6 ³
-55 to 150
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 (for 5s)
0.2 (Typical)
g
For footnotes refer to the last page
www.irf.com
1
10/18/10
Free Datasheet http://www.Datasheet4U.com


International Rectifier Electronic Components Datasheet

2N7632UC Datasheet

Power MOSFET

No Preview Available !

IRHLUC7670Z4, 2N7632UC
Pre-Irradiation
Electrical Characteristics For N-Channel Die @Tj = 25°C (Unless Otherwise specified)
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
BVDSS/TJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
VGS(th)/TJ Gate Threshold Voltage Coefficient
gfs Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Min
60
1.0
0.25
IGSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Typ Max Units
——
V
0.07 — V/°C
Test Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1.0mA
— 0.75
VGS = 4.5V, ID = 0.56A Ã
— 2.0 V
-4.5 — mV/°C
VDS = VGS, ID = 250µA
——
— 1.0
S
VDS = 10V, IDS = 0.56A Ã
VDS= 48V ,VGS= 0V
— 10 µA
— 100
— -100
nA
— 3.6
— 1.5 nC
VDS = 48V,
VGS = 0V, TJ =125°C
VGS = 10V
VGS = -10V
VGS = 4.5V, ID = 0.89A
VDS = 30V
— 1.8
— 8.0
— 15
— 30
ns
VDD = 30V, ID = 0.89A,
VGS = 5.0V, RG = 24
— 12
33 —
nH Measured from the center of
drain pad to center of source pad
145 —
43 —
2.5 —
pF
VGS = 0V, VDS = 25V
f = 1.0MHz
8.2 —
f = 1.0MHz, open drain
Source-Drain Diode Ratings and Characteristics (Per N Channel Die)
Parameter
Min Typ Max Units
Test Conditions
IS
ISM
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) À
0.89
3.56
A
VSD Diode Forward Voltage
— — 1.2 V
Tj = 25°C, IS = 0.89A, VGS = 0V Ã
trr Reverse Recovery Time
— — 65 ns Tj = 25°C, IF = 0.89A, di/dt 100A/µs
QRR Reverse Recovery Charge
— — 67 nC
VDD 25V Ã
ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance (Per N Channel Die)
Parameter
Min Typ Max
RthJA
Junction-to-Ambient
— — 125
Units
°C/W
Test Conditions
Typical socket mount
Note: Corresponding Spice and Saber models are available on International Rectifier Website.
For footnotes refer to the last page
2 www.irf.com
Free Datasheet http://www.Datasheet4U.com


Part Number 2N7632UC
Description Power MOSFET
Maker International Rectifier
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