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International Rectifier Electronic Components Datasheet

52N15D Datasheet

IRFB52N15D

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PD - 94357A
SMPS MOSFET
IRFB52N15D
IRFS52N15D
IRFSL52N15D
HEXFET® Power MOSFET
Applications
l High frequency DC-DC converters
VDSS
150V
RDS(on) max
0.032
ID
60A
Benefits
l Low Gate-to-Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
TO-220AB
IRFB52N15D
D2Pak
TO-262
IRFS52N15D IRFSL52N15D
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TA = 25°C
PD @TC = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation ‡
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw†
Thermal Resistance
RθJC
RθCS
RθJA
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface †
Junction-to-Ambient†
Junction-to-Ambient‡
Notes  through ‡ are on page 11
www.irf.com
Max.
60
43
240
3.8
320
2.1
± 30
5.5
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
V/ns
°C
Typ.
–––
0.50
–––
–––
Max.
0.47
–––
62
40
Units
°C/W
1
06/25/02


International Rectifier Electronic Components Datasheet

52N15D Datasheet

IRFB52N15D

No Preview Available !

IRFB/IRFS/IRFSL52N15D
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
IGSS Gate-to-Source Reverse Leakage
150
–––
–––
3.0
–––
–––
–––
–––
––– –––
0.16 –––
––– 0.032
––– 5.0
––– 25
––– 250
––– 100
––– -100
V
V/°C
V
µA
nA
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 36A „
VDS = VGS, ID = 250µA
VDS = 150V, VGS = 0V
VDS = 120V, VGS = 0V, TJ = 150°C
VGS = 30V
VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
gfs Forward Transconductance
19 ––– ––– S VDS = 50V, ID = 36A
Qg Total Gate Charge
––– 60 89
ID = 36A
Qgs Gate-to-Source Charge
––– 18 27 nC VDS = 75V
Qgd Gate-to-Drain ("Miller") Charge
––– 28 42
VGS = 10V, „
td(on)
Turn-On Delay Time
––– 16 –––
VDD = 75V
tr
td(off)
Rise Time
Turn-Off Delay Time
––– 47 ––– ns ID = 36A
––– 28 –––
RG = 2.5
tf Fall Time
––– 25 –––
VGS = 10V „
Ciss Input Capacitance
––– 2770 –––
VGS = 0V
Coss Output Capacitance
––– 590 –––
VDS = 25V
Crss Reverse Transfer Capacitance
––– 110 ––– pF ƒ = 1.0MHz
Coss
Output Capacitance
––– 3940 –––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Coss
Output Capacitance
––– 260 –––
VGS = 0V, VDS = 120V, ƒ = 1.0MHz
Coss eff. Effective Output Capacitance
––– 550 –––
VGS = 0V, VDS = 0V to 120V …
Avalanche Characteristics
Parameter
EAS Single Pulse Avalanche Energy‚†
IAR Avalanche Current
EAR Repetitive Avalanche Energy
Typ.
–––
–––
–––
Max.
470
36
32
Units
mJ
A
mJ
Diode Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) †
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse RecoveryCharge
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– 60
––– ––– 240
MOSFET symbol
A showing the
integral reverse
p-n junction diode.
G
D
S
––– ––– 1.5 V TJ = 25°C, IS = 36A, VGS = 0V „
––– 140 210 nS TJ = 25°C, IF = 36A
––– 780 1170 nC di/dt = 100A/µs „
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2 www.irf.com


Part Number 52N15D
Description IRFB52N15D
Maker International Rectifier
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52N15D Datasheet PDF






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