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AUIRF1010EZ - Power MOSFET

General Description

www.DataSheet4U.com Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Key Features

  • O O O O O O O Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified.
  • HEXFET® Power MOSFET D AUIRF1010EZ AUIRF1010EZS AUIRF1010EZL 60V 8.5mΩ 84A 75A D V(BR)DSS RDS(on) max. ID (Silicon Limited) G S ID (Package Limited) D.

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Full PDF Text Transcription for AUIRF1010EZ (Reference)

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AUTOMOTIVE GRADE PD - 95962 Features O O O O O O O Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche All...

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ce 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * HEXFET® Power MOSFET D AUIRF1010EZ AUIRF1010EZS AUIRF1010EZL 60V 8.5mΩ 84A 75A D V(BR)DSS RDS(on) max. ID (Silicon Limited) G S ID (Package Limited) D Description www.DataSheet4U.com Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche r