Download the AUIRF1324S datasheet PDF.
This datasheet also covers the AUIRF1324L variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.
General Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
Key Features
l l l l l l l l
Advanced Process Technology Ultra Low On-Resistance Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified.
VDSS RDS(on) typ. ID (Silicon Limited) ID (Package Limited)
G S
24V 1.3mΩ 340A 195A
c
www. DataSheet4U. com.
Note: The manufacturer provides a single datasheet file (AUIRF1324L_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.
Full PDF Text Transcription for AUIRF1324S (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
AUIRF1324S. For precise diagrams, and layout, please refer to the original PDF.
AUTOMOTIVE GRADE AUIRF1324S AUIRF1324L HEXFET® Power MOSFET D PD - 97483 Features l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dV/dT Rating...
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vanced Process Technology Ultra Low On-Resistance Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * VDSS RDS(on) typ. ID (Silicon Limited) ID (Package Limited) G S 24V 1.3mΩ 340A 195A c www.DataSheet4U.com Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanch
AUIRF1324S Datasheet
