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AUIRF3305 Datasheet Power MOSFET

Manufacturer: International Rectifier (now Infineon)

Overview: AUTOMOTIVE MOSFET PD - 96336 AUIRF3305 HEXFET® Power MOSFET.

General Description

Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.

This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.

TO-220AB G D S Gate Drain Source Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.

Key Features

  • l l l l l l l l l Advanced Planar Technology Low On-Resistance Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified.
  • D V(BR)DSS 55V 8mΩ 140A G S RDS(on) max. ID.