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AUIRF4905L - Power MOSFET

Download the AUIRF4905L datasheet PDF. This datasheet also covers the AUIRF4905S variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.

Features

  • l l l l l l l l Advanced Planar Technology P-Channel MOSFET Low On-Resistance 150°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified.
  • AUIRF4905S/L D HEXFET® Power MOSFET V(BR)DSS RDS(on) max. ID (Silicon Limited) -55V 20m -70A -42A G S ID (Package Limited) D.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AUIRF4905S-InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription

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AUTOMOTIVE GRADE Features l l l l l l l l Advanced Planar Technology P-Channel MOSFET Low On-Resistance 150°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * AUIRF4905S/L D HEXFET® Power MOSFET V(BR)DSS RDS(on) max. ID (Silicon Limited) -55V 20m -70A -42A G S ID (Package Limited) D Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.
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