l l l l l l l l l Advanced Planar Technology Low On-Resistance Dual P Channel MOSFET Dynamic dV/dT Rating Logic Level 150°C Operating Temperature Fast Switching Lead-Fre.

this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance pe.

Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggediz.

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