AUIRFL024N Datasheet (International Rectifier)

AUIRFL024N Description

Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low onresistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well

AUIRFL024N Features

* Advanced Planar Technology

* Low On-Resistance

* Dynamic dV/dT Rating

* 150°C Operating Temperature

* Fast Switching

* Fully Avalanche Rated

* Repetitive Avalanche Allowed up to Tjmax

* Lead-Free, RoHS Compliant

* Automotive Q

AUIRFL024N, Power MOSFET - International Rectifier

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AUIRFL024N Description