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AUIRFL024NTR - Power MOSFET

This page provides the datasheet information for the AUIRFL024NTR, a member of the AUIRFL024N Power MOSFET family.

Datasheet Summary

Description

Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low onresistance per silicon area.

Features

  • Advanced Planar Technology.
  • Low On-Resistance.
  • Dynamic dV/dT Rating.
  • 150°C Operating Temperature.
  • Fast Switching.
  • Fully Avalanche Rated.
  • Repetitive Avalanche Allowed up to Tjmax.
  • Lead-Free, RoHS Compliant.
  • Automotive Qualified.

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Full PDF Text Transcription

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AUTOMOTIVE GRADE AUIRFL024N Features • Advanced Planar Technology • Low On-Resistance • Dynamic dV/dT Rating • 150°C Operating Temperature • Fast Switching • Fully Avalanche Rated • Repetitive Avalanche Allowed up to Tjmax • Lead-Free, RoHS Compliant • Automotive Qualified* Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low onresistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications. HEXFET® Power MOSFET D V(BR)DSS 55V G RDS(on) max.
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