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International Rectifier Electronic Components Datasheet

AUIRFL024NTR Datasheet

Power MOSFET

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AUTOMOTIVE GRADE
AUIRFL024N
Features
Advanced Planar Technology
Low On-Resistance
Dynamic dV/dT Rating
150°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified*
Description
Specifically designed for Automotive applications, this
cellular design of HEXFET® Power MOSFETs utilizes
the latest processing techniques to achieve low on-
resistance per silicon area. This benefit combined
with the fast switching speed and ruggedized device
design that HEXFET power MOSFETs are well known
for, provides the designer with an extremely efficient
and reliable device for use in Automotive and a wide
variety of other applications.
HEXFET® Power MOSFET
D V(BR)DSS
55V
G
RDS(on) max. 75mΩ
S ID
2.8A
G
Gate
D
S
D
G
SOT-223
AUIRFL024N
D
Drain
S
Source
Base part number
AUIRFL024N
Package Type
SOT-223
Standard Pack
Form
Quantity
Tube
95
Tape and Reel
2500
Orderable Part Number
AUIRFL024N
AUIRFL024NTR
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the
specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
ID @ TA = 25°C
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 25°C
Parameter
h Continuous Drain Current, VGS @ 10V
g Continuous Drain Current, VGS @ 10V
g Continuous Drain Current, VGS @ 10V
™ Pulsed Drain Current
h Power Dissipation (PCB Mount)
g Power Dissipation (PCB Mount)
g Linear Derating Factor (PCB Mount)
Max.
4.0
2.8
2.3
11.2
2.1
1.0
8.3
Units
A
W
mW/°C
VGS
Gate-to-Source Voltage
± 20
V
EAS
d Single Pulse Avalanche Energy (Thermally Limited)
214
mJ
IAR
Ù Avalanche Current
2.8
A
EAR
™g Repetitive Avalanche Energy
0.1
mJ
dv/dt
e Peak Diode Recovery dv/dt
5.0
V/ns
TJ
TSTG
Operating Junction and
Storage Temperature Range
-55 to + 150
°C
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJA
g Junction-to-Ambient (PCB mount, steady state)
90
120
°C/W
RθJA
h Junction-to-Ambient (PCB mount, steady state)
50
60
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
1
www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
March 26, 2014


International Rectifier Electronic Components Datasheet

AUIRFL024NTR Datasheet

Power MOSFET

No Preview Available !

AUIRFL024N
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
ΔV(BR)DSS/ΔTJ
RDS(on)
VGS(th)
gfs
IDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
55 ––– –––
––– 0.056 –––
––– ––– 75
2.0 ––– 4.0
3.0 ––– –––
––– ––– 25
––– ––– 250
––– ––– 100
––– ––– -100
V
V/°C
mΩ
V
S
μA
nA
VGS = 0V, ID = 250μA
f Reference to 25°C, ID = 1mA
VGS = 10V, ID = 2.8A
VDS = VGS, ID = 250μA
VDS = 25V, ID = 1.6A
VDS = 55V, VGS = 0V
VDS = 44V, VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg
Total Gate Charge
––– ––– 18.3
ID = 1.68A
Qgs
Qgd
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
––– ––– 3.0
––– ––– 7.7
f nC VDS = 28V
VGS = 10V, See Fig. 6 and 9
td(on)
Turn-On Delay Time
––– 8.1 –––
VDD = 28V
tr
Rise Time
––– 13.4 ––– ns ID = 1.68A
td(off)
tf
Turn-Off Delay Time
Fall Time
––– 22.2 –––
––– 17.7 –––
f RG = 24 Ω
RD = 17Ω, See Fig. 10
Ciss
Input Capacitance
––– 400 –––
VGS = 0V
Coss
Output Capacitance
––– 145 ––– pF VDS = 25V
Crss
Reverse Transfer Capacitance
––– 60 –––
ƒ = 1.0MHz, See Fig. 5
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
––– ––– 2.8
MOSFET symbol
(Body Diode)
ISM
Pulsed Source Current
Ù (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
––– ––– 11.2
A showing the
integral reverse
––– ––– 1.0
––– 35 53
––– 50 75
f p-n junction diode.
V TJ = 25°C, IS = 1.68A, VGS = 0V
f ns TJ = 25°C, IF = 1.68A
nC di/dt = 100A/μs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11)
‚ VDD = 25V, starting TJ = 25°C, L = 54.7mH
RG = 25Ω, IAS = 2.8A. (See Figure 12)
ƒ ISD 1.68A, di/dt 155A/µs, VDD V(BR)DSS,
TJ 150°C .
„ Pulse width 300µs; duty cycle 2%.
… When mounted on FR-4 board using minimum recommended
footprint.
† When mounted on 1 inch square copper board, for comparison
with other SMD devices.
2
www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
March 26, 2014


Part Number AUIRFL024NTR
Description Power MOSFET
Maker International Rectifier
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AUIRFL024NTR Datasheet PDF






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