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AUIRFN7107TR - Power MOSFET

This page provides the datasheet information for the AUIRFN7107TR, a member of the AUIRFN7107 Power MOSFET family.

Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon are.

Features

  •  Advanced Process Technology.
  •  Ultra Low On-Resistance.
  •  175°C Operating Temperature.
  •  Fast Switching.
  •  Repetitive Avalanche Allowed up to Tjmax.
  •  Lead-Free, RoHS Compliant.
  •  Automotive Qualified.

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Full PDF Text Transcription

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AUTOMOTIVE GRADE AUIRFN7107 Features  Advanced Process Technology  Ultra Low On-Resistance  175°C Operating Temperature  Fast Switching  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Automotive Qualified * Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon are. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this product an extremely efficient and reliable device for use in Automotive and wide variety of other applications.
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