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International Rectifier Electronic Components Datasheet

AUIRFN7107TR Datasheet

Power MOSFET

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AUTOMOTIVE GRADE
AUIRFN7107
Features
 Advanced Process Technology
 Ultra Low On-Resistance
 175°C Operating Temperature
 Fast Switching
 Repetitive Avalanche Allowed up to Tjmax
 Lead-Free, RoHS Compliant
 Automotive Qualified *
Description
Specifically designed for Automotive applications, this
HEXFET® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per
silicon are. Additional features of this design are a 175°C
junction operating temperature, fast switching speed and
improved repetitive avalanche rating. These features
combine to make this product an extremely efficient and
reliable device for use in Automotive and wide variety of
other applications.
Applications
Injection
Heavy Loads
DC-DC Converter
HEXFET® POWER MOSFET
VDSS
RDS(on) max
(@VGS = 10V)
QG (typical)
ID
(@TC (Bottom) = 25°C)
75V
8.5m
51nC
75A
G
Gate
D
Drain
PQFN 5X6 mm
S
Source
Base Part Number
Package Type
Standard Pack
Form
Quantity
Complete Part Number
AUIRFN7107
PQFN 5mm x 6mm
Tape and Reel
4000
AUIRFN7107TR
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
VDS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom) = 100°C
IDM
PD @TA = 25°C
PD @TC(Bottom) = 25°C
VGS
EAS
IAR
TJ
TSTG
Parameter
Drain-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Operating Junction and
Storage Temperature Range
Max.
75
14
12
75
53
300
4.4
125
0.029
± 20
123
45
-55 to + 175
Units
V
A
W
W/°C
V
mJ
A
°C
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
1 www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
April 14, 2014


International Rectifier Electronic Components Datasheet

AUIRFN7107TR Datasheet

Power MOSFET

No Preview Available !

AUIRFN7107
Thermal Resistance
Symbol
Parameter
RJC (Bottom)
RJC (Top)
RJA
RJA (<10s)
Junction-to-Case
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max.
V(BR)DSS
Drain-to-Source Breakdown Voltage
75 ––– –––
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
––– 0.074 –––
––– 6.9 8.5
VGS(th)
Gate Threshold Voltage
2.0 ––– 4.0
RG
Internal Gate Resistance
––– 0.82 –––
gfs
Forward Transconductance
73 ––– –––
IDSS
Drain-to-Source Leakage Current
––– ––– 20
––– ––– 250
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
––– ––– 100
––– ––– -100
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max.
Qg
Qgs
Qgd
Qsync
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Qg - Qgd)
––– 51 77
––– 15 –––
––– 14 –––
––– 37 –––
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
––– 8.0 –––
––– 12 –––
––– 19 –––
––– 7.0 –––
––– 3001 –––
––– 371 –––
––– 151 –––
Diode Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max.
––– ––– 75
––– ––– 300
––– 0.85 1.3
––– 28 –––
––– 145 –––
Typ.
–––
–––
–––
–––
Max.
1.2
27
34
22
Units
°C/W
Units
Conditions
V VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 1.0mA
m VGS = 10V, ID = 45A
V VDS = VGS, ID = 100µA

S VDS = 25V, ID = 45A
µA
VDS = 75V, VGS = 0V
VDS = 75V, VGS = 0V, TJ = 125°C
nA
VGS = 20V
VGS = -20V
Units
Conditions
ID = 45A
nC
VDS = 38V
VGS = 10V
ID = 45A, VDS =0V, VGS = 10V
VDD = 75V
ns
ID = 45A
RG = 1.8
VGS = 10V
VGS = 0V
pF VDS = 25V
ƒ = 1.0 MHz
Units
Conditions
A
MOSFET symbol
showing the
A
integral reverse
p-n junction diode.
V TJ = 25°C, IS = 45A, VGS = 0V
ns TJ = 25°C, IF = 45A, VDD = 38V
nC di/dt = 500A/µs
2 www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
April 14, 2014


Part Number AUIRFN7107TR
Description Power MOSFET
Maker International Rectifier
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AUIRFN7107TR Datasheet PDF






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