Datasheet Summary
- 97492 ..
AUTOMOTIVE GRADE
Features l l l l l l l
HEXFET® Power MOSFET
Advanced Process Technology Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS pliant Automotive Qualified
- V(BR)DSS RDS(on) max. ID (Silicon Limited)
40V 9.0mΩ 77A 42A
ID (Package Limited)
Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional Features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive...
