AUIRFR3504 - Power MOSFET

Infineon

General Description

Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.

Key Features

Advanced Planar Technology.
Low On-Resistance.
175°C Operating Temperature.
Fast Switching.
Fully Avalanche Rated.
Repetitive Avalanche Allowed up to Tjmax.
Lead-Free, RoHS Compliant.
Automotive Qualified.
.

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AUIRFR3504 power mosfet by Infineon - Datasheet Preview

Datasheet Details

Part number	AUIRFR3504
Manufacturer	Infineon
File Size	668.25 KB
Description	Power MOSFET
Datasheet	AUIRFR3504 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AUTOMOTIVE GRADE Features  Advanced Planar Technology  Low On-Resistance  175°C Operating Temperature  Fast Switching  Fully Avalanche Rated  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Automotive Qualified * Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications. AUIRFR3504 HEXFET® Power MOSFET VDSS RDS(on) typ. max.