AUIRFR3504Z Datasheet | International Rectifier

- 97492 .. AUTOMOTIVE GRADE Features l l l l l l l HEXFET® Power MOSFET Advanced Process Technology Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS pliant Automotive Qualified - V(BR)DSS RDS(on) max. ID (Silicon Limited) 40V 9.0mΩ 77A 42A ID (Package Limited) Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional Features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive...