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AUIRFU3607 - Advanced Process Technology

Download the AUIRFU3607 datasheet PDF (AUIRFR3607 included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for advanced process technology.

Description

VDSS RDS(on) typ.

max.

Features

  • l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified.

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Note: The manufacturer provides a single datasheet file (AUIRFR3607_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription

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PD - 96376 AUTOMOTIVE GRADE Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified * Description AUIRFR3607 AUIRFU3607 HEXFET® Power MOSFET D G S VDSS RDS(on) typ. max. ID (Silicon Limited) ID (Package Limited) D 75V 7.34mΩ 9.0mΩ 80A 56A c Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .
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