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International Rectifier Electronic Components Datasheet

AUIRFU3607 Datasheet

Advanced Process Technology

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AUTOMOTIVE GRADE
PD - 96376
AUIRFR3607
Features
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified *
Description
G
AUIRFU3607
HEXFET® Power MOSFET
D VDSS
RDS(on) typ.
max.
ID (Silicon Limited)
S ID (Package Limited)
75V
7.34mΩ
c9.0mΩ
80A
56A
Specifically designed for Automotive applications, this
HEXFET® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per silicon
area. Additional features of this design are a 175°C junction
operating temperature, fast switching speed and improved
repetitive avalanche rating . These features combine to make
this design an extremely efficient and reliable device for use in
Automotive applications and a wide variety of other applications.
D
S
G
D-Pak
AUIRFR3607
S
D
G
I-Pak
AUIRFU3607
GDS
Absolute Maximum Ratings
Gate
Drain
Source
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are
stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the
specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient
temperature (TA) is 25°C, unless otherwise specified.
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
VGS
EAS (Thermally limited)
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
dPulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
eGate-to-Source Voltage
Single Pulse Avalanche Energy
ÃdAvalanche Current
gRepetitive Avalanche Energy
fPeak Diode Recovery
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
80™
56™
56
310
140
0.96
± 20
120
46
14
27
-55 to + 175
300(1.6mm from case)
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Parameter
kRθJC
Junction-to-Case
jRθJA Junction-to-Ambient
jRθJA Junction-to-Ambient (PCB Mount)
Typ.
–––
–––
–––
Max.
1.045
50
110
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
Free Datasheet http://ww0w6.d/a2t2as/h1e1et4u.com/


International Rectifier Electronic Components Datasheet

AUIRFU3607 Datasheet

Advanced Process Technology

No Preview Available !

AUIRFR/U3607
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
ΔV(BR)DSS/ΔTJ
RDS(on)
VGS(th)
gfs
IDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
IGSS Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
75 ––– –––
––– 0.096 –––
––– 7.34 9.0
V VGS = 0V, ID = 250μA
dV/°C Reference to 25°C, ID = 5mA
gmΩ VGS = 10V, ID = 46A
2.0 ––– 4.0 V VDS = VGS, ID = 100μA
115 ––– ––– S VDS = 50V, ID = 46A
––– ––– 20 μA VDS = 75V, VGS = 0V
––– ––– 250
VDS = 60V, VGS = 0V, TJ = 125°C
––– ––– 100 nA VGS = 20V
––– ––– -100
VGS = -20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qgs
Qgd
Qsync
RG(int)
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss eff. (ER)
Coss eff. (TR)
Parameter
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Qg - Qgd)
Internal Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance (Energy Related)
Effective Output Capacitance (Time Related)
Min.
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
56
13
16
40
0.55
16
110
43
96
3070
280
130
380
610
Max. Units
Conditions
84 nC ID = 46A
g––– VDS = 38V
––– VGS = 10V
––– ID = 46A, VDS =0V, VGS = 10V
––– Ω
––– ns VDD = 49V
––– ID = 46A
g––– RG = 6.8Ω
––– VGS = 10V
––– pF VGS = 0V
––– VDS = 50V
––– ƒ = 1.0MHz
j––– VGS = 0V, VDS = 0V to 60V
h––– VGS = 0V, VDS = 0V to 60V
Diode Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
Ãd(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IRRM Reverse Recovery Current
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
™––– ––– 80
A MOSFET symbol
D
––– ––– 310
showing the
integral reverse
G
––– ––– 1.3
p-n junction diode.
gV TJ = 25°C, IS = 46A, VGS = 0V
S
––– 33 50 ns TJ = 25°C
VR = 64V,
––– 39 59
TJ = 125°C
––– 32 48 nC TJ = 25°C
gIF = 46A
di/dt = 100A/μs
––– 47 71
TJ = 125°C
––– 1.9 ––– A TJ = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Calculated continuous current based on maximum allowable junction
temperature. Bond wire current limit is 56A. Note that current
„
…
ISD 46A, di/dt 1920A/μs, VDD V(BR)DSS,
Pulse width 400μs; duty cycle 2%.
TJ
175°C.
limitations arising from heating of the device leads may occur with † Coss eff. (TR) is a fixed capacitance that gives the same charging time
some lead mounting arrangements.
as Coss while VDS is rising from 0 to 80% VDSS.
‚ Repetitive rating; pulse width limited by max. junction
temperature.
‡ Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
ƒ Limited by TJmax, starting TJ = 25°C, L = 0.12mH
RG = 25Ω, IAS = 46A, VGS =10V. Part not recommended for use
above this value.
ˆ When mounted on 1" square PCB (FR-4 or G-10 Material). For recom-
mended footprint and soldering techniques refer to application note #AN-994.
‰ Rθ is measured at TJ approximately 90°C.
2 www.irf.com
Free Datasheet http://www.datasheet4u.com/


Part Number AUIRFU3607
Description Advanced Process Technology
Maker International Rectifier
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