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AUIRFZ44V - Power MOSFET

Description

Specifically designed for Automotive applications, this stripe planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.

Features

  • l Advanced Planar Technology l Low On-Resistance l Dynamic dV/dT Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified.
  • G AUIRFZ44V HEXFET® Power MOSFET D V(BR)DSS 60V RDS(on) max. 16.5mΩ S ID 55A D.

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PD - 96415 AUTOMOTIVE GRADE Features l Advanced Planar Technology l Low On-Resistance l Dynamic dV/dT Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified * G AUIRFZ44V HEXFET® Power MOSFET D V(BR)DSS 60V RDS(on) max. 16.5mΩ S ID 55A D Description Specifically designed for Automotive applications, this stripe planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.
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