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AUIRFZ44ZS - Power MOSFET

Download the AUIRFZ44ZS datasheet PDF. This datasheet also covers the AUIRFZ44Z variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Key Features

  • Advanced Process Technology.
  • Ultra Low On-Resistance.
  • 175°C Operating Temperature.
  • Fast Switching.
  • Repetitive Avalanche Allowed up to Tjmax.
  • Lead-Free, RoHS Compliant.
  • Automotive Qualified.
  • VDSS HEXFET® Power MOSFET 55V RDS(on) max. 13.9m ID 51A D.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AUIRFZ44Z-Infineon.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
AUIRFZ44ZS HEXFET Power MOSFET International Rectifier
AUIRFZ44Z HEXFET Power MOSFET International Rectifier
AUIRFZ44NL Power MOSFET International Rectifier
AUIRFZ44NS Power MOSFET International Rectifier
AUIRFZ44V Power MOSFET International Rectifier

Other Datasheets by Infineon

Part Number Description
AUIRFZ44Z Power MOSFET
AUIRFZ44N Power MOSFET
AUIRFZ44VZS Power MOSFET
AUIRFZ24NL Power MOSFET
AUIRFZ24NS Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
AUTOMOTIVE GRADE AUIRFZ44Z AUIRFZ44ZS Features  Advanced Process Technology  Ultra Low On-Resistance  175°C Operating Temperature  Fast Switching  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Automotive Qualified * VDSS HEXFET® Power MOSFET 55V RDS(on) max. 13.9m ID 51A D Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .