Datasheet4U Logo Datasheet4U.com

AUIRFZ44ZS - Power MOSFET

This page provides the datasheet information for the AUIRFZ44ZS, a member of the AUIRFZ44Z Power MOSFET family.

Datasheet Summary

Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Features

  • Advanced Process Technology.
  • Ultra Low On-Resistance.
  • 175°C Operating Temperature.
  • Fast Switching.
  • Repetitive Avalanche Allowed up to Tjmax.
  • Lead-Free, RoHS Compliant.
  • Automotive Qualified.
  • VDSS HEXFET® Power MOSFET 55V RDS(on) max. 13.9m ID 51A D.

📥 Download Datasheet

Datasheet preview – AUIRFZ44ZS

Datasheet Details

Part number AUIRFZ44ZS
Manufacturer Infineon
File Size 713.26 KB
Description Power MOSFET
Datasheet download datasheet AUIRFZ44ZS Datasheet
Additional preview pages of the AUIRFZ44ZS datasheet.

📁 Similar Datasheet

  • AUIRFZ44ZS - HEXFET Power MOSFET (International Rectifier)
  • AUIRFZ44Z - HEXFET Power MOSFET (International Rectifier)
  • AUIRFZ44NL - Power MOSFET (International Rectifier)
  • AUIRFZ44NS - Power MOSFET (International Rectifier)
  • AUIRFZ44V - Power MOSFET (International Rectifier)
  • AUIRFZ44VZS - Power MOSFET (International Rectifier)
  • AUIRFZ48N - HEXFET Power MOSFET (International Rectifier)
  • AUIRFZ48Z - Power MOSFET (International Rectifier)
  • AUIRFZ48ZS - Power MOSFET (International Rectifier)
  • AUIRFZ24NL - Power MOSFET (International Rectifier)
Other Datasheets by Infineon

Full PDF Text Transcription

Click to expand full text
AUTOMOTIVE GRADE AUIRFZ44Z AUIRFZ44ZS Features  Advanced Process Technology  Ultra Low On-Resistance  175°C Operating Temperature  Fast Switching  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Automotive Qualified * VDSS HEXFET® Power MOSFET 55V RDS(on) max. 13.9m ID 51A D Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .
Published: |