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AUIRFZ44NS - Power MOSFET

Download the AUIRFZ44NS datasheet PDF. This datasheet also covers the AUIRFZ44NL variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.

Key Features

  • l l l l l l l l l Advanced Planar Technology Low On-Resistance Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified.
  • V(BR)DSS 55V 17.5mΩ 49A G S RDS(on) max. ID D D.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AUIRFZ44NL_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
AUIRFZ44N Power MOSFET Infineon
AUIRFZ44VZS Power MOSFET Infineon
AUIRFZ44Z Power MOSFET Infineon
AUIRFZ44ZS Power MOSFET Infineon
AUIRFZ24NL Power MOSFET Infineon

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
AUIRFZ44NL Power MOSFET
AUIRFZ44V Power MOSFET
AUIRFZ44VZS Power MOSFET
AUIRFZ44Z HEXFET Power MOSFET
AUIRFZ44ZS HEXFET Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
AUTOMOTIVE GRADE PD-96391A AUIRFZ44NS AUIRFZ44NL HEXFET® Power MOSFET D Features l l l l l l l l l Advanced Planar Technology Low On-Resistance Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * V(BR)DSS 55V 17.5mΩ 49A G S RDS(on) max. ID D D Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.