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PD - 97543
AUTOMOTIVE GRADE
Features
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AUIRFZ44Z AUIRFZ44ZS
HEXFET® Power MOSFET
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Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified *
D
V(BR)DSS RDS(on) max. ID
D D
55V 13.9mΩ 51A
G S
Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .