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AUIRFZ48Z - Power MOSFET

General Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Key Features

  • l l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified.
  • HEXFET® Power MOSFET D AUIRFZ48Z AUIRFZ48ZS 55V 11mΩ 61A V(BR)DSS RDS(on) max. ID G S.

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📁 Similar Datasheet

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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
AUIRFZ48ZS Power MOSFET
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Full PDF Text Transcription (Reference)

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PD - 97612A AUTOMOTIVE GRADE Features l l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * HEXFET® Power MOSFET D AUIRFZ48Z AUIRFZ48ZS 55V 11mΩ 61A V(BR)DSS RDS(on) max. ID G S Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .