AUIRGB4062D1 - INSULATED GATE BIPOLAR TRANSISTOR

Features

Low VCE (on) Trench IGBT Technology.
Low Switching Losses.
5μs SCSOA.
Square RBSOA.
100% of The Parts Tested for ILM.
Positive VCE (on) Temperature Coefficient.
Ultra Fast Soft Recovery Co-pak Diode.
Tighter Distribution of Parameters.
Lead-Free, RoHS Compliant.
Automotive Qualified.
Benefits.
High Efficiency in a Wide Range of.

International Rectifier

Datasheet Details

Part number	AUIRGB4062D1
Manufacturer	International Rectifier
File Size	408.90 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	AUIRGB4062D1 Datasheet
Additional preview pages of the AUIRGB4062D1 datasheet.

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Full PDF Text Transcription

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AUIRGB4062D1 AUIRGS4062D1 AUTOMOTIVE GRADE AUIRGSL4062D1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • Low VCE (on) Trench IGBT Technology • Low Switching Losses • 5μs SCSOA • Square RBSOA • 100% of The Parts Tested for ILM • Positive VCE (on) Temperature Coefficient.

Published: Sep 8, 2015 |