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AUIRGP4063D-E Datasheet - International Rectifier

INSULATED GATE BIPOLAR TRANSISTOR

AUIRGP4063D-E Features

* Low VCE (ON) Trench IGBT Technology

* Low switching losses

* Maximum Junction temperature 175 °C

* 5 μS short circuit SOA G

* Square RBSOA

* 100% of the parts tested for 4X rated current (ILM)

* Positive VCE (ON) Temperature co-efficient

AUIRGP4063D-E Datasheet (332.60 KB)

Preview of AUIRGP4063D-E PDF

Datasheet Details

Part number:

AUIRGP4063D-E

Manufacturer:

International Rectifier

File Size:

332.60 KB

Description:

Insulated gate bipolar transistor.

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AUIRGP4063D-E INSULATED GATE BIPOLAR TRANSISTOR International Rectifier

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