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AUIRGP4066D1 - INSULATED GATE BIPOLAR TRANSISTOR

Features

  • Low VCE (ON) Trench IGBT Technology Low switching losses Maximum Junction temperature 175 °C 5 μS short circuit SOA Square RBSOA 100% of the parts tested for 4X rated current (I LM) Positive VCE (ON) Temperature Coefficient Soft Recovery Co-Pak Diode Tight parameter distribution Lead-Free, RoHS Compliant Automotive Qualified.
  • E C G C G E C AUIRGP4066D1 AUIRGP4066D1-E VCES = 600V I.

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AUTOMOTIVE GRADE INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • • • Low VCE (ON) Trench IGBT Technology Low switching losses Maximum Junction temperature 175 °C 5 μS short circuit SOA Square RBSOA 100% of the parts tested for 4X rated current (I LM) Positive VCE (ON) Temperature Coefficient Soft Recovery Co-Pak Diode Tight parameter distribution Lead-Free, RoHS Compliant Automotive Qualified * E C G C G E C AUIRGP4066D1 AUIRGP4066D1-E VCES = 600V IC(Nominal) = 75A tSC ≥ 5μs, TJ(max) = 175°C n-channel C VCE(on) typ. = 1.
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