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AUIRGP66524D0 - INSULATED GATE BIPOLAR TRANSISTOR

Key Features

  • Low VCE(on) Trench IGBT Technology Low Switching Losses 6µs SCSOA Guaranteed Square RBSOA and 100% Clamp IL Tested Positive VCE(on) Temperature Coefficient Ultra Fast Soft Recovery Co-pak Diode Lead-Free, RoHS Compliant, Automotive Qualified.
  •  C G E n-channel G Gate   GCE TO-247AC GC E TO-247AD AUIRGP66524D0 AUIRGF66524D0 C Collector E Emitter   Benefits High Efficiency in a Wide Range of.

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  COOLiRIGBT™  AUTOMOTIVE GRADE AUIRGP66524D0 AUIRGF66524D0 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V INOMINAL = 24A Tsc 6µs, TJ(MAX) = 175°C VCE(ON) typ. = 1.