AUIRL7766M2TR1 mosfet equivalent, power mosfet.
of this MOSFET are 175°C operating junction temperature
and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust.
* Logic Level Gate Drive
* Exceptionally Small Footprint and Low Profile
* High Power Density
* Low Para.
The AUIRL7766M2 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging technology to achieve exceptional performance in a package that has the footprint of an SO-8 or 5X6mm PQFN and only 0.7mm pr.
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