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International Rectifier Electronic Components Datasheet

CPU165MK Datasheet

IGBT SIP MODULE Short Circuit Rated UltraFast IGBT

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Preliminary Data Sheet PD - 5.036
CPU165MK
IGBT SIP MODULE
Features
• Short Circuit Rated - 10µs @ 125°C, V GE = 15V
Fully isolated printed circuit board mount package
• Switching-loss rating includes all "tail" losses
• HEXFREDTM soft ultrafast diodes
• Optimized for high operating frequency (over 5kHz)
Short Circuit Rated UltraFast IGBT
1,2
4 Q1
5
D1
6,7
Product Summary
Output Current in a Typical 20 kHz Motor Drive
10 ARMS with TC = 90°C, TJ = 125°C, Supply Voltage 360Vdc,
Power Factor 0.8, Modulation Depth 80%.
Description
The IGBT technology is the key to International Rectifier's advanced line of IMS
(Insulated Metal Substrate) Power Modules. These modules are more efficient
than comparable bipolar transistor modules, while at the same time having the
simpler gate-drive requirements of the familiar power MOSFET. This superior
technology has now been coupled to a state of the art materials system that
maximizes power throughput with low thermal resistance. This package is highly
suited to power applications and where space is at a premium.
9 Q2
D2
11,12
These new short circuit rated devices are especially suited for motor control and
other totem-pole applications requiring short circuit withstand capability.
Absolute Maximum Ratings
IMS-1
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
tsc
VGE
VISOL
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current, each IGBT
Continuous Collector Current, each IGBT
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Isolation Voltage, any terminal to case, 1 min.
Maximum Power Dissipation, each IGBT
Maximum Power Dissipation, each IGBT
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
Max.
600
33
17
100
100
15
100
10
± 20
2500
83
33
-40 to +150
300 (0.063 in. (1.6mm) from case)
5-7 lbf•in (0.55 - 0.8 N•m)
Units
V
A
µs
V
VRMS
W
°C
Thermal Resistance
RθJC (IGBT)
RθJC (DIODE)
RθCS (MODULE)
Wt
Parameter
Junction-to-Case, each IGBT, one IGBT in conduction
Junction-to-Case, each diode, one diode in conduction
Case-to-Sink, flat, greased surface
Weight of module
Typ.
0.1
20 (0.7)
Max.
1.5
2.0
Units
°C/W
g (oz)
C-961
Revision 2
To Order


International Rectifier Electronic Components Datasheet

CPU165MK Datasheet

IGBT SIP MODULE Short Circuit Rated UltraFast IGBT

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CPU165MK
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage 600 — — V VGE = 0V, IC = 250µA
V(BR)CES/TJ Temp. Coeff. of Breakdown Voltage
VCE(on)
Collector-to-Emitter Saturation Voltage
— 0.60 — V/°C VGE = 0V, IC = 1.0mA
— 2.1 2.7
IC = 30A
VGE = 15V
— 2.6 — V IC = 52A
— 2.3 —
IC = 30A, T J = 150°C
VGE(th)
Gate Threshold Voltage
VGE(th)/TJ Temp. Coeff. of Threshold Voltage
3.0 — 5.5
VCE = VGE, IC = 250µA
— -14 — mV/°C VCE = VGE, IC = 250µA
gfe Forward Transconductance
9.8 17 — S VCE = 100V, I C = 30A
ICES
Zero Gate Voltage Collector Current
— — 250 µA VGE = 0V, VCE = 600V
— — 6500
VGE = 0V, VCE = 600V, T J = 150°C
VFM Diode Forward Voltage Drop
— 1.3 1.7 V IC = 25A
IGES Gate-to-Emitter Leakage Current
— 1.2 1.5
IC = 25A, T J = 150°C
— — ±500 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
tsc
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
td(on)
tr
td(off)
tf
Ets
Cies
Coes
Cres
trr
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Irr Diode Peak Reverse Recovery Current
Qrr Diode Reverse Recovery Charge
di(rec)M/dt
Diode Peak Rate of Fall of Recovery
During tb
Notes: Repetitive rating; V GE=20V, pulse width
limited by max. junction temperature.
Min. Typ. Max. Units
Conditions
— 120 200
— 27 42
— 44 73
IC = 30A
nC VCC = 400V
— 74 —
— 100 —
— 260 460
— 190 290
TJ = 25°C
ns IC = 30A, VCC = 480V
VGE = 15V, R G = 5.0
Energy losses include "tail" and
— 1.9 —
diode reverse recovery.
— 2.6 — mJ
— 4.5 7.0
10 — —
— 77 —
— 100 —
— 530 —
— 360 —
µs VCC = 360V, T J = 125°C
VGE = 15V, R G = 5.0, VCPK < 500V
TJ = 150°C,
ns IC = 30A, VCC = 480V
VGE = 15V, R G = 5.0
Energy losses include "tail" and
— 7.3 — mJ diode reverse recovery.
— 2900 —
— 220 —
— 30 —
VGE = 0V
pF VCC = 30V
ƒ = 1.0MHz
— 50 75 ns TJ = 25°C
— 105 160
TJ = 125°C
— 4.5 10 A TJ = 25°C
— 8.0 15
TJ = 125°C
— 112 375 nC TJ = 25°C
— 420 1200
TJ = 125°C
— 250 — A/µs TJ = 25°C
— 160 —
TJ = 125°C
IF = 25A
VR = 200V
di/dt = 200A/µs
VCC=80%(VCES), VGE=20V, L=10µH,
RG= 5.0.
Pulse width 80µs; duty factor 0.1%.
Pulse width 5.0µs,
single shot.
Refer to Section D - page D-13 for Package Outline 4 - IMS-1 Package (10 pins)
C-962
To Order


Part Number CPU165MK
Description IGBT SIP MODULE Short Circuit Rated UltraFast IGBT
Maker International Rectifier
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CPU165MK Datasheet PDF






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