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International Rectifier Electronic Components Datasheet

CPU165MM Datasheet

IGBT SIP MODULE Short Circuit Rated Fast IGBT

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Preliminary Data Sheet PD - 5.030
CPU165MM
IGBT SIP MODULE
Short Circuit Rated Fast IGBT
Features
• Short Circuit Rated - 10µs @ 125°C, V GE = 15V
Fully isolated printed circuit board mount package
• Switching-loss rating includes all "tail" losses
• HEXFREDTM soft ultrafast diodes
• Optimized for medium operating frequency (1 to
10kHz).
Product Summary
Output Current in a Typical 5.0 kHz Motor Drive
14 ARMS with TC = 90°C, TJ = 125°C, Supply Voltage 360Vdc,
Power Factor 0.8, Modulation Depth 80%.
Description
The IGBT technology is the key to International Rectifier's advanced line of IMS
(Insulated Metal Substrate) Power Modules. These modules are more efficient
than comparable bipolar transistor modules, while at the same time having the
simpler gate-drive requirements of the familiar power MOSFET. This superior
technology has now been coupled to a state of the art materials system that
maximizes power throughput with low thermal resistance. This package is highly
suited to power applications and where space is at a premium.
1,2
4 Q1
5
9 Q2
D1
6,7
D2
11,12
These new short circuit rated devices are especially suited for motor control and
other totem-pole applications requiring short circuit withstand capability.
Absolute Maximum Ratings
IMS-1
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
tsc
VGE
VISOL
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current, each IGBT
Continuous Collector Current, each IGBT
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Isolation Voltage, any terminal to case, 1 minute
Maximum Power Dissipation, each IGBT
Maximum Power Dissipation, each IGBT
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
Max.
600
42
23
120
120
15
120
10
± 20
2500
83
33
-40 to +150
300 (0.063 in. (1.6mm) from case)
5-7 lbf•in (0.55 - 0.8 N•m)
Units
V
A
µs
V
VRMS
W
°C
Thermal Resistance
RθJC (IGBT)
RθJC (DIODE)
RθCS (MODULE)
Wt
Parameter
Junction-to-Case, each IGBT, one IGBT in conduction
Junction-to-Case, each diode, one diode in conduction
Case-to-Sink, flat, greased surface
Weight of module
Typ.
0.1
20 (0.7)
Max.
1.5
2.0
Units
°C/W
g (oz)
C-407
Revision 2
To Order


International Rectifier Electronic Components Datasheet

CPU165MM Datasheet

IGBT SIP MODULE Short Circuit Rated Fast IGBT

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CPU165MM
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage 600 — — V VGE = 0V, IC = 250µA
V(BR)CES/TJ Temp.Coeff. of Breakdown Voltage
— 0.62 — V/°C VGE = 0V, IC = 1.0mA
VCE(on)
Collector-to-Emitter Saturation Voltage — 1.8 2.0
IC = 35A
VGE = 15V
— 2.3 — V IC = 60A
— 2.0 —
IC = 35A, T J = 150°C
VGE(th)
Gate Threshold Voltage
3.0 — 5.5
VCE = VGE, IC = 250µA
VGE(th)/TJ Temp. Coeff. of Threshold Voltage
— -14 — mV/°C VCE = VGE, IC = 250µA
gfe Forward Transconductance
11 20 — S VCE = 100V, I C = 35A
ICES
Zero Gate Voltage Collector Current
— — 250 µA VGE = 0V, VCE = 600V
— — 6500
VGE = 0V, VCE = 600V, T J = 150°C
VFM Diode Forward Voltage Drop
— 1.3 1.7 V IC = 25A
— 1.2 1.5
IC = 25A, T J = 150°C
IGES Gate-to-Emitter Leakage Current
— — ±500 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
tsc
td(on)
tr
td(off)
tf
Ets
Cies
Coes
Cres
trr
Irr
Qrr
di(rec)M/dt
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
Diode Peak Rate of Fall of Recovery
During tb
— 120 180
IC = 35A
— 25 38
— 40 60
nC VCC = 400V
— 78 —
— 110 —
— 340 510
— 265 400
TJ = 25°C
ns IC = 35A, VCC = 480V
VGE = 15V, R G = 5.0
Energy losses include "tail" and
— 2.1 —
diode reverse recovery.
— 4.0 — mJ
— 6.1 9.5
10 — —
— 80 —
µs VCC = 360V, T J = 125°C
VGE = 15V, R G = 5.0, VCPK < 500V
TJ = 150°C,
— 110 —
— 610 —
ns IC = 35A, VCC = 480V
VGE = 15V, R G = 5.0
— 440 —
Energy losses include "tail" and
— 9.4 — mJ diode reverse recovery.
— 2900 —
— 230 —
VGE = 0V
pF VCC = 30V
— 30 —
ƒ = 1.0MHz
— 50 75 ns TJ = 25°C
— 105 160
— 4.5 10
TJ = 125°C
A TJ = 25°C
IF = 25A
— 8.0 15
— 112 375
TJ = 125°C
nC TJ = 25°C
VR = 200V
— 420 1200
TJ = 125°C
— 250 — A/µs TJ = 25°C
di/dt = 200A/µs
— 160 —
TJ = 125°C
Notes: Repetitive rating; V GE=20V, pulse width
limited by max. junction temperature.
VCC=80%(VCES), VGE=20V, L=10µH,
RG= 5.0.
Refer to Section D for the following: Pulse width 80µs; duty factor 0.1%.
Pulse width 5.0µs,
single shot.
Package Outline 4 - IMS-1 Package (10 pins) Section D - page D-13
C-408
To Order


Part Number CPU165MM
Description IGBT SIP MODULE Short Circuit Rated Fast IGBT
Maker International Rectifier
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CPU165MM Datasheet PDF






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