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International Rectifier Electronic Components Datasheet

CPV363M4FPbF Datasheet

IGBT SIP MODULE

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Bulletin I27313 02/07
CPV363M4FPbF
IGBT SIP MODULE
Features
• Fully isolated printed circuit board mount package
• Switching-loss rating includes all "tail" losses
• HEXFREDTM soft ultrafast diodes
• Optimized for medium operating (1 to 10 kHz)
See Fig. 1 for Current vs. Frequency curve
• TOTALLY LEAD-FREE
3 Q1
6 Q2
Fast IGBT
1
D1 9 Q3
4
D2
12
Q4
D3
15
Q5
10
D4
18
Q6
D5
16
D6
Product Summary
7 13
Output Current in a Typical 5.0 kHz Motor Drive
11 ARMS per phase (3.1 kW total) with TC = 90°C, TJ = 125°C, Supply Voltage 360Vdc,
Power Factor 0.8, Modulation Depth 115% (See Figure 1)
Description
The IGBT technology is the key to International Rectifier's advanced line of
IMS (Insulated Metal Substrate) Power Modules. These modules are more
efficient than comparable bipolar transistor modules, while at the same time
having the simpler gate-drive requirements of the familiar power MOSFET.
This superior technology has now been coupled to a state of the art materials
system that maximizes power throughput with low thermal resistance. This
package is highly suited to motor drive applications and where space is at a
premium.
19
IMS-2
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
VGE
VISOL
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current, each IGBT
Continuous Collector Current, each IGBT
Pulsed Collector Current c
Clamped Inductive Load Current d
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Isolation Voltage, any terminal to case, 1 minute
Maximum Power Dissipation, each IGBT
Maximum Power Dissipation, each IGBT
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
Max.
600
16
8.7
50
50
6.1
50
±20
2500
36
14
-40 to +150
300 (0.063 in. (1.6mm) from case)
5-7 lbf•in (0.55-0.8 N•m)
Units
V
A
V
VRMS
W
°C
Thermal Resistance
RθJC (IGBT)
RθJC (DIODE)
RθCS (MODULE)
Wt
Parameter
Junction-to-Case, each IGBT, one IGBT in conduction
Junction-to-Case, each diode, one diode in conduction
Case-to-Sink, flat, greased surface
Weight of module
Typ.
–––
–––
0.10
20 (0.7)
Max.
3.5
5.5
–––
–––
Units
°C/W
g (oz)
Document Number: 94484
www.vishay.com
1


International Rectifier Electronic Components Datasheet

CPV363M4FPbF Datasheet

IGBT SIP MODULE

No Preview Available !

CPV363M4FPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)CES
ΔV(BR)CES/ΔTJ
VCE(on)
VGE(th)
ΔVGE(th)/ΔTJ
gfe
ICES
VFM
IGES
Parameter
Min.
Collector-to-Emitter Breakdown Voltagee 600
Temperature Coeff. of Breakdown Voltage –––
Collector-to-Emitter Saturation Voltage –––
–––
–––
Gate Threshold Voltage
3.0
Temperature Coeff. of Threshold Voltage –––
Forward Transconductance f
6.0
Zero Gate Voltage Collector Current
–––
–––
Diode Forward Voltage Drop
–––
–––
Gate-to-Emitter Leakage Current
–––
Typ. Max. Units
––– ––– V
0.69 ––– V/°C
1.37 1.5
1.63 ––– V
1.37 –––
––– 6.0
-11 ––– mV/°C
8.0 ––– S
––– 250 μA
––– 2500
1.3 1.7 V
1.2 1.6
––– ±100 nA
Conditions
VGE = 0V, IC = 250μA
VGE = 0V, IC = 1.0mA
IC = 8.7A
VGE = 15V
IC = 16A
See Fig. 2, 5
IC = 8.7A, TJ = 150°C
VCE = VGE, IC = 250μA
VCE = VGE, IC = 250μA
VCE = 100V, IC = 8.7A
VGE = 0V, VCE = 600V
VGE = 0V, VCE = 600V, TJ = 150°C
IC = 12A
See Fig. 13
IC = 12A, TJ = 150°C
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
Cies
Coes
Cres
trr
Irr
Qrr
di(rec)M/dt
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Charge
Diode Reverse Recovery Charge
Diode Peak Rate of Fall of Recovery
During tb
Min. Typ. Max. Units
Conditions
––– 54 82
––– 8.1 12
––– 21 32
––– 39 –––
––– 16 –––
––– 220 330
––– 160 240
IC = 8.7A
nC VCC = 400V
VGE = 15V See Fig. 8
TJ = 25°C
ns IC = 8.7A, VCC = 480V
VGE = 15V, RG = 22Ω
Energy losses include "tail" and
––– 0.30 –––
diode reverse recovery.
––– 0.55 ––– mJ See Fig. 9, 10, 11, 18
––– 0.85 1.3
––– 37 –––
––– 16 –––
––– 400 –––
––– 290 –––
TJ = 150°C, See Fig. 9, 10, 11, 18
ns IC = 8.7A, VCC = 480V
VGE = 15V, RG = 22Ω
Energy losses include "tail" and
––– 1.57 ––– mJ diode reverse recovery.
––– 1100 –––
––– 74 –––
––– 14 –––
VGE = 0V
pF VCC = 30V
ƒ = 1.0MHz
See Fig. 7
––– 42 60 ns TJ = 25°C See Fig.
––– 80 120
TJ = 125°C
14
––– 3.5 6.0 A TJ = 25°C See Fig.
––– 5.6 10
TJ = 125°C
15
––– 80 180 nC TJ = 25°C See Fig.
––– 220 600
TJ = 125°C
16
––– 180 ––– A/μs TJ = 25°C See Fig.
––– 116 –––
TJ = 125°C 17
IF = 12A
VR = 200V
di/dt =200Aμs
Document Number: 94484
www.vishay.com
2


Part Number CPV363M4FPbF
Description IGBT SIP MODULE
Maker International Rectifier
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CPV363M4FPbF Datasheet PDF






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