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International Rectifier Electronic Components Datasheet

CPV363M4K Datasheet

IGBT SIP MODULE

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PD-5.043A
CPV363M4K
IGBT SIP MODULE
Short Circuit Rated UltraFast IGBT
Features
• Short Circuit Rated UltraFast: Optimized for high
1
operating frequencies >5.0 kHz , and Short Circuit
Rated to 10µs @ 125°C, VGE = 15V
• Fully isolated printed circuit board mount package
• Switching-loss rating includes all "tail" losses
• HEXFREDTM soft ultrafast diodes
3 Q1
6 Q2
D1 9 Q3
4
D2
12
Q4
D3
15
Q5
10
D4
18
Q6
D5
16
D6
• Optimized for high operating frequency (over 5kHz)
See Fig. 1 for Current vs. Frequency curve
Product Summary
7 13 19
Output Current in a Typical 20 kHz Motor Drive
6.7 ARMS per phase (1.94 kW total) with TC = 90°C, TJ = 125°C, Supply Voltage 360Vdc,
Power Factor 0.8, Modulation Depth 115% (See Figure 1)
Description
The IGBT technology is the key to International Rectifier's advanced line of
IMS (Insulated Metal Substrate) Power Modules. These modules are more
efficient than comparable bipolar transistor modules, while at the same time
having the simpler gate-drive requirements of the familiar power MOSFET.
This superior technology has now been coupled to a state of the art materials
system that maximizes power throughput with low thermal resistance. This
package is highly suited to motor drive applications and where space is at a
premium.
IMS-2
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
tsc
VGE
VISOL
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current, each IGBT
Continuous Collector Current, each IGBT
Pulsed Collector Current 
Clamped Inductive Load Current ‚
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Isolation Voltage, any terminal to case, 1 minute
Maximum Power Dissipation, each IGBT
Maximum Power Dissipation, each IGBT
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
Max.
600
11
6.0
22
22
6.1
22
10
± 20
2500
36
14
-40 to +150
300 (0.063 in. (1.6mm) from case)
5-7 lbf•in (0.55 - 0.8 N•m)
Units
V
A
µs
V
VRMS
W
°C
Thermal Resistance
RθJC (IGBT)
RθJC(DIODE)
RθCS(MODULE)
Wt
Parameter
Junction-to-Case, each IGBT, one IGBT in conduction
Junction-to-Case, each diode, one diode in conduction
Case-to-Sink, flat, greased surface
Weight of module
Typ.
–––
–––
0.1
20 (0.7)
Max.
3.5
5.5
–––
–––
Units
°C/W
g (oz)
2/24/98


International Rectifier Electronic Components Datasheet

CPV363M4K Datasheet

IGBT SIP MODULE

No Preview Available !

CPV363M4K
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltageƒ 600 ––– ––– V VGE = 0V, IC = 250µA
V(BR)CES/TJ Temp. Coeff. of Breakdown Voltage
––– 0.45 ––– V/°C VGE = 0V, IC = 1.0mA
VCE(on)
Collector-to-Emitter Saturation Voltage ––– 1.72 2.10
IC = 6.0A
VGE = 15V
––– 2.00 ––– V IC = 11A
See Fig. 2, 5
––– 1.60 –––
IC = 6.0A, TJ = 150°C
VGE(th)
Gate Threshold Voltage
3.0 ––– 6.0
VCE = VGE, IC = 250µA
VGE(th)/TJ Temp. Coeff. of Threshold Voltage
––– -13 ––– mV/°C VCE = VGE, IC = 250µA
gfe Forward Transconductance „ 3.0 6.0 ––– S VCE = 100V, IC = 12A
ICES Zero Gate Voltage Collector Current ––– ––– 250 µA VGE = 0V, VCE = 600V
––– ––– 2500
VGE = 0V, VCE = 600V, TJ = 150°C
VFM Diode Forward Voltage Drop
––– 1.4 1.7 V IC = 12A
See Fig. 13
––– 1.3 1.6
IC = 12A, TJ = 150°C
IGES Gate-to-Emitter Leakage Current ––– ––– ±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg Total Gate Charge (turn-on)
––– 61 91
IC = 6A
Qge Gate - Emitter Charge (turn-on) ––– 7.4 11 nC VCC = 400V
Qgc
Gate - Collector Charge (turn-on)
––– 27 40
See Fig. 8
td(on)
Turn-On Delay Time
––– 55 –––
TJ = 25°C
tr Rise Time
––– 24 ––– ns IC = 6.0A, VCC = 480V
td(off)
Turn-Off Delay Time
––– 107 160
VGE = 15V, RG = 23
tf Fall Time
Eon Turn-On Switching Loss
––– 92 140
––– 0.28 –––
Energy losses include "tail" and
diode reverse recovery.
Eoff Turn-Off Switching Loss
––– 0.10 ––– mJ See Fig. 9, 10, 18
Ets Total Switching Loss
––– 0.39 0.50
tsc Short Circuit Withstand Time
10 ––– ––– µs VCC = 360V, TJ = 125°C
td(on)
Turn-On Delay Time
––– 54 –––
VGE = 15V, RG = 23, VCPK < 500V
TJ = 150°C, See Fig.10, 11, 18
tr
td(off)
Rise Time
Turn-Off Delay Time
––– 24 –––
––– 161 –––
ns IC = 6.0A, VCC = 480V
VGE = 15V, RG = 23
tf Fall Time
––– 244 –––
Energy losses include "tail" and
Ets Total Switching Loss
Cies Input Capacitance
––– 0.60 ––– mJ diode reverse recovery.
––– 740 –––
VGE = 0V
Coes Output Capacitance
––– 100 ––– pF VCC = 30V
See Fig. 7
Cres Reverse Transfer Capacitance
––– 9.3 –––
ƒ = 1.0MHz
trr Diode Reverse Recovery Time ––– 42 60 ns TJ = 25°C See Fig.
––– 80 120
TJ = 125°C
14
IF = 12A
Irr Diode Peak Reverse Recovery Current ––– 3.5 6.0 A TJ = 25°C See Fig.
––– 5.6 10
TJ = 125°C
15
VR = 200V
Qrr
Diode Reverse Recovery Charge
––– 80 180 nC TJ = 25°C See Fig.
––– 220 600
TJ = 125°C
16 di/dt=200A/µs
d i(rec)M / dt Diode Peak Rate of Fall of Recovery
During tb
––– 180 ––– A/µs TJ = 25°C See Fig.
––– 120 –––
TJ = 125°C
17
Notes:
 Repetitive rating; VGE=20V, pulse width limited
by max. junction temperature. ( See fig. 20)
‚ VCC=80%(VCES), VGE=20V, L=10µH,
RG= 23, ( See fig. 19 )
„ Pulse width 5.0µs,
single shot.
ƒ Pulse width 80µs; duty factor 0.1%.


Part Number CPV363M4K
Description IGBT SIP MODULE
Maker International Rectifier
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CPV363M4K Datasheet PDF






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