CPV363MK Datasheet | International Rectifier

Features - Short Circuit Rated - 10µs @ 125°C, V GE = 15V Fully isolated printed circuit board mount package - Switching-loss rating includes all "tail" losses TM - HEXFRED soft ultrafast diodes - Optimized for high operating frequency (over 5k Hz) See Fig. 1 for Current vs. Frequency curve - 3 Q1 D1 9 4 6 Q2 D2 12 Q4 D4 18 Q3 D3 15 Q5 D5 16 D6 Short Circuit Rated Ultra Fast IGBT 10 Q6 Product Summary 7 13 Output Current in a Typical 20 k Hz Motor Drive 5.4 ARMS per phase (1.7 k W total) with T C = 90°C, T J = 125°C, Supply Voltage 360Vdc, Power Factor 0.8, Modulation Depth 80% (See Figure 1) 19 Description The IGBT technology is the key to International Rectifier's advanced line of IMS (Insulated Metal Substrate) Power Modules. These modules are more efficient than parable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar power MOSFET. This superior technology has now been coupled to a state of the art materials system that maximizes power throughput with low thermal resistance. This package is highly suited to power applications and where space is at a premium. These new short circuit rated devices are especially suited for motor control and other totem-pole applications requiring short circuit withstand capability. IMS-2 Absolute Maximum Ratings Parameter VCES IC @ T C = 25°C IC @ T C = 100°C ICM ILM IF @ T C = 100°C IFM tsc VGE VISOL PD @ T C = 25°C PD @ T C = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current, each IGBT Continuous Collector Current, each IGBT Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Maximum Forward Current Short Circuit Withstand Time Gate-to-Emitter Voltage Isolation Voltage, any terminal to case, 1 min. Maximum Power Dissipation, each IGBT Maximum Power Dissipation, each IGBT Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting torque, 6-32 or M3 screw. Max. 600 11...