F1010N Datasheet Power MOSFET

Manufacturer: International Rectifier (now Infineon)

F1010N power mosfet by International Rectifier (now Infineon) - Datasheet Preview

Datasheet Details

Part number	F1010N
Manufacturer	International Rectifier (now Infineon)
File Size	237.32 KB
Description	Power MOSFET
Download	F1010N Download (PDF)

General Description

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts.

Overview

PD - 91278 IRF1010N HEXFET® Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS(on) = 11mΩ.

Key Features

4) 1.15 (.04 5) M IN 1 2 3 LE A D A S S IG N M E N T S 1 - G ATE 2 - D R A IN 3 - SOURCE 4 - D R A IN 14. 09 ( .55 5) 13. 47 ( .53 0) 4.06 (.160) 3.55 (.140) 3X 3X 1 .40 ( .0 55) 1 .15 ( .0 45) 0.93 (.037) 0.69 (.027) M B A M 3X 0.55 (.022 ) 0.46 (.018 ) 0. 36 ( .014) 2. 54 (.100 ) 2X NO T ES: 1 DI M E N S IO NI NG & T O LE RANCI N G PER ANSI 2 C O N TR O LLIN G D IM E N S IO N : IN C H Y1 4.5M , 1 982. 2. 92 (.115) 2. 64 (.104) 3 O U T LIN E CONF OR M S TO J E DEC OUT LIN E T O -2 2.

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