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International Rectifier Electronic Components Datasheet

F3315 Datasheet

IRF3315

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APPROVED
PD -91623A
IRF3315
l Advanced Process Technology
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power
dissipation levels to approximately 50 watts. The low
thermal resistance and low package cost of the TO-
220 contribute to its wide acceptance throughout the
industry.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Thermal Resistance
RθJC
RθCS
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
www.irf.com
G
HEXFET® Power MOSFET
D
VDSS = 150V
RDS(on) = 0.07
ID = 27A
S
TO-220AB
Max.
27
19
108
136
0.91
± 20
350
12
13.6
2.5
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Typ.
–––
0.50
–––
Max.
1.1
–––
62
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
1
12/09/98


International Rectifier Electronic Components Datasheet

F3315 Datasheet

IRF3315

No Preview Available !

www.DataSheet4U.com
IRF3315
APPROVED
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
gfs Forward Transconductance
IDSS Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD Internal Drain Inductance
LS
Ciss
Coss
Crss
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max.
150 ––– –––
––– 0.187 –––
––– ––– 0.07
2.0 ––– 4.0
11.4 ––– –––
––– ––– 25
––– ––– 250
––– ––– 100
––– ––– -100
––– ––– 95
––– ––– 11
––– ––– 47
––– 9.6 –––
––– 32 –––
––– 49 –––
––– 38 –––
––– 4.5 –––
––– 7.5 –––
––– 1300 –––
––– 300 –––
––– 160 –––
Units
V
V/°C
V
S
µA
nA
nC
ns
nH
pF
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 12A „
VDS = VGS, ID = 250µA
VDS = 50V, ID = 12A
VDS = 150V, VGS = 0V
VDS = 120V, VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
ID = 12A
VDS = 120V
VGS = 10V, See Fig. 6 and 13 „
VDD = 75V
ID = 12A
RG = 5.1
RD = 5.9, See Fig. 10 „
Between lead,
D
6mm (0.25in.)
from package
G
and center of die contact
VGS = 0V
VDS = 25V
ƒ = 1.0MHz, See Fig. 5
S
Source-Drain Ratings and Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) 
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– 27
MOSFET symbol
A showing the
integral reverse
––– ––– 108
p-n junction diode.
G
D
S
––– ––– 1.3 V TJ = 25°C, IS = 12A, VGS = 0V „
––– 174 260 ns TJ = 25°C, IF = 12A
––– 1.2 1.7 µC di/dt = 100A/µs „
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ Starting TJ = 25°C, L = 4.9mH
RG = 25 , IAS = 12A. (See Figure 12)
ƒ ISD 12A, di/dt 140A/µs, VDD V(BR)DSS,
TJ 175°C
„ Pulse width 300µs; duty cycle 2%.
2 www.irf.com


Part Number F3315
Description IRF3315
Maker International Rectifier
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