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International Rectifier Electronic Components Datasheet

F4905S Datasheet

IRF4905S

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l Advanced Process Technology
l Surface Mount (IRF4905S)
l Low-profile through-hole (IRF4905L)
l 175°C Operating Temperature
l Fast Switching
l P-Channel
l Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
The through-hole version (IRF4905L) is available for low-
profile applications.
Absolute Maximum Ratings
G
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TA = 25°C
PD @TC = 25°C
Continuous Drain Current, VGS @ -10V…
Continuous Drain Current, VGS @ -10V…
Pulsed Drain Current …
Power Dissipation
Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚…
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ…
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
RθJC
Junction-to-Case
RθJA Junction-to-Ambient ( PCB Mounted,steady-state)**
PD - 9.1478A
IRF4905S/L
HEXFET® Power MOSFET
D VDSS = -55V
RDS(on) = 0.02
ID = -74A
S
D 2 Pak
T O -262
Max.
-74
-52
-260
3.8
200
1.3
± 20
930
-38
20
-5.0
-55 to + 175
300 (1.6mm from case )
Units
A
W
W
W/°C
V
mJ
A
mJ
V/ns
°C
Typ.
–––
–––
Max.
0.75
40
Units
°C/W
8/25/97
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International Rectifier Electronic Components Datasheet

F4905S Datasheet

IRF4905S

No Preview Available !

IRF4905S/L
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
gfs Forward Transconductance
IDSS Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Source Inductance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
-55 ––– ––– V VGS = 0V, ID = -250µA
––– -0.05 ––– V/°C Reference to 25°C, ID = -1mA…
––– ––– 0.02 VGS = -10V, ID = -38A „
-2.0 ––– -4.0 V VDS = VGS, ID = -250µA
21 ––– ––– S VDS = -25V, ID = -38A…
––– ––– -25 µA VDS = -55V, VGS = 0V
––– ––– -250
VDS = -44V, VGS = 0V, TJ = 150°C
––– ––– 100 nA VGS = 20V
––– ––– -100
VGS = -20V
––– ––– 180
ID = -38A
––– ––– 32
––– ––– 86
nC VDS = -44V
VGS = -10V, See Fig. 6 and 13 „…
––– 18 –––
VDD = -28V
––– 99 ––– ns ID = -38A
––– 61 –––
RG = 2.5
––– 96 –––
RD = 0.72Ω, See Fig. 10 „
Between lead,
––– 7.5 ––– nH and center of die contact
––– 3400 –––
VGS = 0V
––– 1400 ––– pF VDS = -25V
––– 640 –––
ƒ = 1.0MHz, See Fig. 5…
Source-Drain Ratings and Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) 
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
––– ––– -74
A showing the
integral reverse
––– ––– -260
p-n junction diode.
G
D
S
––– ––– -1.6 V TJ = 25°C, IS = -38A, VGS = 0V „
––– 89 130 ns TJ = 25°C, IF = -38A
––– 230 350 nC di/dt = -100A/µs „…
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
„ Pulse width 300µs; duty cycle 2%.
‚ Starting TJ = 25°C, L = 1.3mH
RG = 25, IAS = -38A. (See Figure 12)
… Uses IRF4905 data and test conditions
ƒ ISD -38A, di/dt -270A/µs, VDD V(BR)DSS,
TJ 175°C
** When mounted on 1" square PCB (FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
Free Datasheet http://www.datasheet4u.com/


Part Number F4905S
Description IRF4905S
Maker International Rectifier
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