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F4905S - IRF4905S

Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

Features

  • VGS = 5.0V for Logic Level and 3V Drive Devices Fig 14. For P-Channel.

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Other Datasheets by International Rectifier (now Infineon)

Part Number Description

Full PDF Text Transcription

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PD - 9.1478A IRF4905S/L HEXFET® Power MOSFET Advanced Process Technology Surface Mount (IRF4905S) l Low-profile through-hole (IRF4905L) l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description l l D VDSS = -55V RDS(on) = 0.02Ω G ID = -74A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4.
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