IRF4905S
Features
O Advanced Process Technology O Ultra Low On-Resistance O 150°C Operating Temperature O Fast Switching O Repetitive Avalanche Allowed up to Tjmax O Some Parameters Are Differrent from
IRF4905S O Lead-Free
Description
Features of this design are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features bine to make this design an extremely efficient and reliable device for use in a wide variety of other applications.
HEXFET® Power MOSFET
VDSS = -55V
RDS(on) = 20mΩ
ID = -42A
D2Pak IRF4905SPb F
TO-262 IRF4905LPb F
Absolute Maximum Ratings
G Gate
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
PD @TC = 25°C Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage d EAS...
