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IRF4905SPBF - HEXFET Power MOSFET

Download the IRF4905SPBF datasheet PDF. This datasheet also covers the IRF4905LPBF variant, as both devices belong to the same hexfet power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • O O O O O O HEXFET® Power MOSFET D O Advanced Process Technology Ultra Low On-Resistance 150°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Some Parameters Are Differrent from IRF4905S Lead-Free VDSS = -55V RDS(on) = 20mΩ G S ID = -42A D.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRF4905LPBF_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PD - 97034 IRF4905SPbF IRF4905LPbF Features O O O O O O HEXFET® Power MOSFET D O Advanced Process Technology Ultra Low On-Resistance 150°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Some Parameters Are Differrent from IRF4905S Lead-Free VDSS = -55V RDS(on) = 20mΩ G S ID = -42A D Description Features of this design are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety of other applications. D G D S G D S D2Pak IRF4905SPbF G D TO-262 IRF4905LPbF S Absolute Maximum Ratings Parameter Gate Drain Max. -70 -44 -42 -280 170 1.