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International Rectifier Electronic Components Datasheet

F7338 Datasheet

IRF7338

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PD - 94372C
IRF7338
l Ultra Low On-Resistance
l Dual N and P Channel MOSFET
l Surface Mount
l Available in Tape & Reel
S1
G1
S2
G2
Description
These N and P channel MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
the extremely low on-resistance per silicon area. This
benefit provides the designer with an extremely efficient
device for use in battery and load management
applications.
HEXFET® Power MOSFET
N-CHANNEL MOSFET
18
27
36
45
P-CHANNEL MOSFET
Top View
N-Ch P-Ch
D1
D1
VDSS 12V
D2
-12V
D2
RDS(on) 0.0340.150
This Dual SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of power
applications. With these improvements, multiple devices
can be used in an application with dramatically reduced
board space. The package is designed for vapor phase,
infrared, or wave soldering techniques.
SO-8
Absolute Maximum Ratings
VDS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
TJ, TSTG
Parameter
Drain-to-Source Voltage
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current 
Power Dissipation ƒ
Power Dissipation ƒ
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Thermal Resistance
Symbol
RθJL
RθJA
www.irf.com
Parameter
Junction-to-Drain Lead
Junction-to-Ambient ƒ
Max.
N-Channel
P-Channel
12
6.3
5.2
26
2.0
1.3
16
±12 „
-55 to + 150
-12
-3.0
-2.5
-13
± 8.0
Units
A
W
mW/°C
V
°C
Typ.
–––
–––
Max.
20
62.5
Units
°C/W
1
6/2/03


International Rectifier Electronic Components Datasheet

F7338 Datasheet

IRF7338

No Preview Available !

www.DataSheet4U.com
IRF7338
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
Parameter
Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(ON)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
N-Ch 12 — —
P-Ch -12 — —
V
N-Ch
P-Ch
0.01
-0.01
V/°C
N-Ch
P-Ch
— 0.034
0.060
0.150
— 0.200
N-Ch 0.6 — 1.5
P-Ch -0.40 — -1.0
V
N-Ch 9.2 — —
P-Ch 3.5 — —
S
N-Ch — — 20
P-Ch —
N-Ch —
-1.0
50
µA
P-Ch — — -25
N-Ch –– — ±100 nA
P-Ch — — ±100
N-Ch — — 8.6
P-Ch —
N-Ch —
6.6
1.9
nC
P-Ch — — 1.3
N-Ch — — 3.9
P-Ch — — 1.6
N-Ch — 6.0 —
P-Ch — 9.6 —
N-Ch — 7.6 —
P-Ch — 13 —
ns
N-Ch — 26 —
P-Ch — 27 —
N-Ch — 34 —
P-Ch — 25 —
N-Ch — 640 —
P-Ch — 490 —
N-Ch — 340 —
pF
P-Ch — 80 —
N-Ch — 110 —
P-Ch — 58 —
Conditions
VGS = 0V, ID = 250µA
VGS = 0V, ID = -250µA
Reference to 25°C, ID = 1mA
Reference to 25°C, ID = -1mA
VGS = 4.5V, ID = 6.0A ‚
VGS = 3.0V, ID = 2.0A ‚
VGS = -4.5V, ID = -2.9A ‚
VGS = -2.7V, ID = -1.5A ‚
VDS = VGS, ID = 250µA
VDS = VGS, ID = -250µA
VDS = 6.0V, ID = 6.0A ‚
VDS = -6.0V, ID = -1.5A ‚
VDS = 9.6V, VGS = 0V
VDS = -9.6 V, VGS = 0V
VDS = 9.6V, VGS = 0V, TJ = 55°C
VDS = -9.6V, VGS = 0V, TJ = 55°C
VGS = ± 12V
VGS = ± 8.0V
N-Channel
ID = 6.0A, VDS = 6.0V, VGS = 4.5V
P-Channel
ID = -2.9A, VDS = -9.6V, VGS = -4.5 V
N-Channel
VDD = 6.0V, ID = 1.0A, RG = 6.0,
VGS = 4.5V
‚
P-Channel
VDD = -6.0V, ID = -2.9A, RG = 6.0,
VGS = -4.5V
N-Channel
VGS = 0V, VDS = 9.0V, ƒ = 1.0MHz
P-Channel
VGS = 0V, VDS = -9.0V, ƒ = 1.0KHz
Source-Drain Ratings and Characteristics
Parameter
IS Continuous Source Current (Body Diode)
ISM Pulsed Source Current (Body Diode) 
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
‚ Pulse width 400µs; duty cycle 2%.
Min. Typ. Max. Units
N-Ch — — 6.3
P-Ch — — -3.0 A
N-Ch — — 26
P-Ch — — -13
N-Ch — — 1.3 V
P-Ch — — -1.2
N-Ch — 51 76 ns
P-Ch — 37 56
N-Ch — 43 64 nC
P-Ch — 20 30
Conditions
TJ = 25°C, IS = 1.7A, VGS = 0V ‚
TJ = 25°C, IS = -2.9A, VGS = 0V ‚
N-Channel
TJ = 25°C, IF = 1.7A, di/dt = 100A/µs
P-Channel
TJ = 25°C, IF = -2.9A, di/dt = -100A/µs
‚
ƒ Surface mounted on 1 in square Cu board.
„ The N-channel MOSFET can withstand 15V VGS max
for up to 24 hours over the life of the device.
2 www.irf.com


Part Number F7338
Description IRF7338
Maker International Rectifier
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F7338 Datasheet PDF






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