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F7338 IRF7338

F7338 Description

www.DataSheet4U.com PD - 94372C IRF7338 HEXFET® Power MOSFET l l l l Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in.
These N and P channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silic.

F7338 Features

* imum Avalanche Energy Vs. Drain Current 8 www. irf. com www. DataSheet4U. com P-Channel 800 IRF7338 ID= -2.9A -V GS , Gate-to-Source Voltage (V) VGS = 0V, f = 1 MHZ C iss = C gs + C gd , C ds SHORTED Crss Coss =C gd = Cds + Cgd 12 10 8 6 4 2 0 VDS = -9.6V VDS= -6.0V 600 C, Capacitance (pF) Ci

F7338 Applications

* This Dual SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The pac

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IRF7338 International Rectifier
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