F7338 Datasheet - International Rectifier

IRF7338

F7338 Features

* imum Avalanche Energy Vs. Drain Current 8 www.irf.com www.DataSheet4U.com P-Channel 800 IRF7338 ID= -2.9A -V GS , Gate-to-Source Voltage (V) VGS = 0V, f = 1 MHZ C iss = C gs + C gd , C ds SHORTED Crss Coss =C gd = Cds + Cgd 12 10 8 6 4 2 0 VDS = -9.6V VDS= -6.0V 600 C, Capacitance (pF) Ci

F7338 General Description

These N and P channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. This Dual SO-8 has.

F7338 Datasheet (227.37 KB)

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F7338

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International Rectifier

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227.37 KB

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irf7338.
www.DataSheet4U.com PD - 94372C IRF7338 HEXFET® Power MOSFET l l l l Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in.

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F7338 Features

F7338 General Description

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