Datasheet4U Logo Datasheet4U.com

F7338 - IRF7338

General Description

These N and P channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area.

This benefit provides the designer with an extremely efficient device for use in battery and load management applications.

Key Features

  • imum Avalanche Energy Vs. Drain Current 8 www. irf. com www. DataSheet4U. com P-Channel 800 IRF7338 ID= -2.9A -V GS , Gate-to-Source Voltage (V) VGS = 0V, f = 1 MHZ C iss = C gs + C gd , C ds.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
F7304 Dual P-Channel 30V MOSFET VBsemi
F7316 Dual P-Channel MOSFET VBsemi
F7342 Dual P-Channel 60V MOSFET VBsemi
F7343Q N- and P-Channel MOSFET VBsemi

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
F7313 Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com PD - 94372C IRF7338 HEXFET® Power MOSFET l l l l Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel S1 G1 S2 G2 N-CHANNEL MOSFET 1 8 2 7 D1 D1 N-Ch VDSS 12V P-Ch -12V 3 6 D2 D2 4 5 P-CHANNEL MOSFET RDS(on) 0.034Ω 0.150Ω Top View Description These N and P channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. This Dual SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications.