900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




International Rectifier Electronic Components Datasheet

F7811W Datasheet

IRF7811W

No Preview Available !

PD-94031A
IRF7811W
HEXFET® Power MOSFET for DC-DC Converters
• N-Channel Application-Specific MOSFETs
• Ideal for CPU Core DC-DC Converters
• Low Conduction Losses
• Low Switching Losses
www.DataSheet4U.com
S1
S2
A
8D
7D
Description
This new device employs advanced HEXFET Power
MOSFET technology to achieve an unprecedented
balance of on-resistance and gate charge. The reduced
conduction and switching losses make it ideal for high
efficiency DC-DC converters that power the latest
generation of microprocessors.
SO-8
S3
G4
6D
5D
Top View
The IRF7811W has been optimized for all parameters
that are critical in synchronous buck converters including
RDS(on), gate charge and Cdv/dt-induced turn-on immunity.
The IRF7811W offers particulary low RDS(on) and high Cdv/
dt immunity for synchronous FET applications.
The package is designed for vapor phase, infra-red,
convection, or wave soldering techniques. Power
dissipation of greater than 3W is possible in a typical
PCB mount application.
DEVICE CHARACTERISTICS…
RDS(on)
Q
G
Qsw
Qoss
IRF7811W
9.0m
18nC
5.5nC
12nC
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain or Source
Current (VGS 4.5V)
Pulsed Drain Current
T = 25°C
A
TL = 90°C
Power Dissipation
T = 25°C
A
TL = 90°C
Junction & Storage Temperature Range
Continuous Source Current (Body Diode)
Pulsed Source Current
Thermal Resistance
Parameter
Maximum Junction-to-Ambientƒ
Maximum Junction-to-Lead
Symbol
VDS
VGS
I
D
IDM
P
D
TJ, TSTG
I
S
ISM
RθJA
RθJL
IRF7811W
30
±12
14
13
109
3.1
3.0
–55 to 150
3.8
109
Max.
40
20
Units
V
A
W
°C
A
Units
°C/W
°C/W
3/13/01


International Rectifier Electronic Components Datasheet

F7811W Datasheet

IRF7811W

No Preview Available !

IRF7811W
Electrical Characteristics
Parameter
Drain-to-Source
Breakdown Voltage
BVDSS
www.DataSheet4U.com
Static Drain-Source
on Resistance
Gate Threshold Voltage
Drain-Source Leakage
CCuurrrreennt t*
RDS(on)
VGS(th)
I
DSS
Min Typ
30 –
9.0
1.0
Max Units
–V
12 m
V
30
150 µA
Gate-Source Leakage
Current
IGSS
Total Gate Chg Cont FET
Total Gate Chg Sync FET
Pre-Vth
Gate-Source Charge
QG
QG
QGS1
Post-Vth
Gate-Source Charge
QGS2
Gate to Drain Charge
QGD
Switch Chg(Qgs2 + Qgd)
Qsw
Output Charge
Qoss
Gate Resistance
RG
Turn-on Delay Time
td (on)
Rise Time
tr
Turn-off Delay Time
td (off)
Fall Time
tf
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance Crss
±100 nA
18 24
15.6
6.0
1.4 nC
4.1
5.5
12
2.0
11
11
29
9.9
– 2335 –
– 400 –
– 119 –
ns
pF
Conditions
VGS = 0V, ID = 250µA
VGS = 4.5V, ID = 15A‚
VDS = VGS,ID = 250µA
V = 24V, V = 0
DS GS
VDS = 24V, VGS = 0,
Tj = 100°C
VGS = ±12V
VGS=5.0V, ID=15A, VDS=16V
VGS = 5V, VDS< 100mV
VDS = 16V, ID = 15A
VDS = 16V, VGS = 0
VDD = 16V, ID = 15A
VGS = 5.0V
Clamped Inductive Load
VDS = 16V, VGS = 0
Source-Drain Rating & Characteristics
Parameter
Min Typ Max Units Conditions
Diode Forward
Voltage*
VSD
1.25 V
IS = 15A‚, VGS = 0V
Reverse Recovery
Charge„
Qrr
45 nC di/dt ~ 700A/µs
VDS = 16V, VGS = 0V, IS = 15A
Reverse Recovery Qrr(s) 41 nC di/dt = 700A/µs
Charge (with Parallel
(with 10BQ040)
Schottky)„
VDS = 16V, VGS = 0V, IS = 15A
Notes: 
‚
ƒ
„
…
2
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width 400 µs; duty cycle 2%.
When mounted on 1 inch square copper board
Typ = measured - Q
oss
Typical
values
of
RDS(on)
measured
at
V
GS
=
4.5V,
Q,
G
Q
SW
and
Q
OSS
measured at VGS = 5.0V, IF = 15A.
www.irf.com


Part Number F7811W
Description IRF7811W
Maker International Rectifier
PDF Download

F7811W Datasheet PDF






Similar Datasheet

1 F7811W IRF7811W
International Rectifier





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy