PD-94031A
IRF7811W
HEXFET® Power MOSFET for DC-DC Converters
• N-Channel Application-Specific MOSFETs
• Ideal for CPU Core DC-DC Converters
• Low Conduction Losses
• Low Switching Losses
www.DataSheet4U.com
S1
S2
A
8D
7D
Description
This new device employs advanced HEXFET Power
MOSFET technology to achieve an unprecedented
balance of on-resistance and gate charge. The reduced
conduction and switching losses make it ideal for high
efficiency DC-DC converters that power the latest
generation of microprocessors.
SO-8
S3
G4
6D
5D
Top View
The IRF7811W has been optimized for all parameters
that are critical in synchronous buck converters including
RDS(on), gate charge and Cdv/dt-induced turn-on immunity.
The IRF7811W offers particulary low RDS(on) and high Cdv/
dt immunity for synchronous FET applications.
The package is designed for vapor phase, infra-red,
convection, or wave soldering techniques. Power
dissipation of greater than 3W is possible in a typical
PCB mount application.
DEVICE CHARACTERISTICS
RDS(on)
Q
G
Qsw
Qoss
IRF7811W
9.0mΩ
18nC
5.5nC
12nC
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain or Source
Current (VGS ≥ 4.5V)
Pulsed Drain Current
T = 25°C
A
TL = 90°C
Power Dissipation
T = 25°C
A
TL = 90°C
Junction & Storage Temperature Range
Continuous Source Current (Body Diode)
Pulsed Source Current
Thermal Resistance
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
Symbol
VDS
VGS
I
D
IDM
P
D
TJ, TSTG
I
S
ISM
RθJA
RθJL
IRF7811W
30
±12
14
13
109
3.1
3.0
–55 to 150
3.8
109
Max.
40
20
Units
V
A
W
°C
A
Units
°C/W
°C/W
3/13/01
