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International Rectifier Electronic Components Datasheet

FB11N50A Datasheet

IRFB11N50A

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PD- 91809B
SMPS MOSFET IRFB11N50A
Applications
l Switch Mode Power Supply ( SMPS )
l Uninterruptable Power Supply
l High speed power switching
HEXFET® Power MOSFET
VDSS
500V
Rds(on) max
0.52
ID
11A
Benefits
l Low Gate Charge Qg results in Simple
Drive Requirement
l Improved Gate, Avalanche and dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche Voltage and Current
TO-220AB G D S
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw
Max.
11
7.0
44
170
1.3
± 30
6.9
-55 to + 150
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
V/ns
°C
Applicable Off Line SMPS Topologies:
l Two Transistor Forward
l Half & Full Bridge
l Power Factor Correction Boost
Notes  through … are on page 8
www.irf.com
1
3/30/99


International Rectifier Electronic Components Datasheet

FB11N50A Datasheet

IRFB11N50A

No Preview Available !

IRFB11N5OA
Static @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
RDS(on)
VGS(th)
IDSS
IGSS
Parameter
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min.
500
–––
2.0
–––
–––
–––
–––
Typ.
–––
–––
–––
–––
–––
–––
–––
Max.
–––
0.52
4.0
25
250
100
-100
Units
V
V
µA
nA
Conditions
VGS = 0V, ID = 250µA
VGS = 10V, ID = 6.6A „
VDS = VGS, ID = 250µA
VDS = 500V, VGS = 0V
VDS = 400V, VGS = 0V, TJ = 150°C
VGS = 30V
VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
gfs Forward Transconductance
Qg Total Gate Charge
Qgs Gate-to-Source Charge
Qgd
td(on)
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
tr
td(off)
Rise Time
Turn-Off Delay Time
tf Fall Time
Ciss Input Capacitance
Coss
Crss
Output Capacitance
Reverse Transfer Capacitance
Coss
Coss
Output Capacitance
Output Capacitance
Coss eff. Effective Output Capacitance
Avalanche Characteristics
Min. Typ. Max. Units
Conditions
6.1 ––– ––– S VDS = 50V, ID = 6.6A
––– ––– 52
ID = 11A
––– ––– 13 nC VDS = 400V
––– ––– 18
VGS = 10V, See Fig. 6 and 13 „
––– 14 –––
VDD = 250V
––– 35 ––– ns ID = 11A
––– 32 –––
RG = 9.1
––– 28 –––
RD = 22,See Fig. 10 „
––– 1423 –––
VGS = 0V
––– 208 –––
VDS = 25V
––– 8.1 ––– pF ƒ = 1.0MHz, See Fig. 5
––– 2000 –––
––– 55 –––
––– 97 –––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 400V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 400V …
Parameter
EAS Single Pulse Avalanche Energy‚
IAR Avalanche Current
EAR Repetitive Avalanche Energy
Thermal Resistance
Typ.
–––
–––
–––
Max.
275
11
17
Units
mJ
A
mJ
Parameter
RθJC
RθCS
RθJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Diode Characteristics
Typ.
–––
0.50
–––
Max.
0.75
–––
62
Units
°C/W
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) 
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse RecoveryCharge
ton Forward Turn-On Time
2
Min. Typ. Max. Units
Conditions
––– ––– 11
––– ––– 44
MOSFET symbol
A showing the
integral reverse
p-n junction diode.
G
D
S
––– ––– 1.5 V TJ = 25°C, IS = 11A, VGS = 0V „
––– 510 770 ns TJ = 25°C, IF = 11A
––– 3.4 5.1 µC di/dt = 100A/µs „
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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Part Number FB11N50A
Description IRFB11N50A
Maker International Rectifier
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FB11N50A Datasheet PDF






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